Modeling electronic and optical properties of III–V quantum dots—selected recent developments

A Mittelstädt, A Schliwa, P Klenovský - Light: Science & Applications, 2022 - nature.com
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …

Atomistic theory of dark excitons in self-assembled quantum dots of reduced symmetry

M Zieliński, Y Don, D Gershoni - Physical Review B, 2015 - APS
We use an atomistic model to consider the effect of shape symmetry breaking on the optical
properties of self-assembled InAs/GaAs quantum dots. In particular, we investigate the …

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

M Zieliński - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dot single-
particle and many-body properties as a function of the quantum dot–surrounding matrix …

Fine structure of light-hole excitons in nanowire quantum dots

M Zieliński - Physical Review B—Condensed Matter and Materials …, 2013 - APS
Quantum dots with light-hole ground states could find numerous applications including
faster quantum bit operations or coherent conversion of photons into electron spins …

[HTML][HTML] Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method

CA Broderick, EP O'Reilly, S Schulz - Journal of Applied Physics, 2024 - pubs.aip.org
The electronic structure of highly mismatched semiconductor alloys is characterized by
carrier localization and strongly influenced by the local alloy microstructure. First-principles …

Excitonic characteristics of blue-emitting quantum dot materials in group II-VI using hybrid time-dependent density functional theory

P Han, J Min, Z Zeng, CS Garoufalis, S Baskoutas… - Physical Review B, 2021 - APS
Colloidal quantum dots (QDs) of group II-VI are key ingredients of next-generation QD light-
emitting diodes technology for display and lighting, yet the understanding of their …

Spin-orbit coupling and magnetic-field dependence of carrier states in a self-assembled quantum dot

K Gawarecki - Physical Review B, 2018 - APS
In this work, we investigate the influence of spin-orbit coupling on the magnetic-field
dependence of carrier states in a self-assembled quantum dot. The electron and hole …

Electron transport properties of graphene quantum dots with non-centro-symmetric gaussian deformation

A Poszwa - Scientific Reports, 2022 - nature.com
A theoretical investigation on electron transport properties of rectangular graphene quantum
dots (GQDs) with non-centro-symmetric out-of-plane Gaussian deformation of elliptic type is …

Crystal field splitting and spontaneous polarization in InP crystal phase quantum dots

M Patera, M Zieliński - Scientific Reports, 2022 - nature.com
Crystal phase quantum dots are formed by vertically stacking zinc-blende and wurtzite
phases during nanowire growth. In this work, we show, using an atomistic many-body …

Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer

M Zieliński - Scientific Reports, 2020 - nature.com
Contrary to simplified theoretical models, atomistic calculations presented here reveal that
sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even …