Reliability of wide band gap power electronic semiconductor and packaging: A review
Y Wang, Y Ding, Y Yin - Energies, 2022 - mdpi.com
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
Semiconductor power devices
J Lutz, H Schlangenotto, U Scheuermann… - Physics, characteristics …, 2011 - Springer
Research on semiconductors has a long history [Lar54, Smi59]. Phenomenologically they
are defined as substances whose electrical resistivity covers a wide range, about 10− 4 to …
are defined as substances whose electrical resistivity covers a wide range, about 10− 4 to …
A 1200-V, 60-A SiC MOSFET multichip phase-leg module for high-temperature, high-frequency applications
In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg
module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) …
module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) …
Survey on high-temperature packaging materials for SiC-based power electronics modules
High temperature SiC devices need the materials for device packages also capable of
working at higher temperature than those for Si devices. This paper presents a selection of …
working at higher temperature than those for Si devices. This paper presents a selection of …
Characterization of packaging warpage, residual stress and their effects on the mechanical reliability of IGBT power modules
W Sun, L Wang, N Zhu, J **n, Y Luo, X Jiang… - Engineering Failure …, 2023 - Elsevier
Injection-moulded power electronics are inevitably subjected to warpage and residual stress
from anisotropic contraction and thermal mismatch during the assembly, which deteriorates …
from anisotropic contraction and thermal mismatch during the assembly, which deteriorates …
Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications
This paper presents a 1200 V, 120 A SiC MOSFET phase-leg module capable of operating
at 200° C ambient temperature. Paralleling six 20 A MOSFET bare dice for each switch, this …
at 200° C ambient temperature. Paralleling six 20 A MOSFET bare dice for each switch, this …
Ceramic substrates for high voltage power electronics: past, present and future
Z Valdez-Nava, D Kenfaui, ML Locatelli… - … on Integrated Power …, 2019 - ieeexplore.ieee.org
In the present work, we report a review of the ceramic substrate technologies used for high
voltage power electronics modules. These technologies will be confronted with the different …
voltage power electronics modules. These technologies will be confronted with the different …
A stress-relieved method based on bottom pattern design considering thermal and mechanical behavior of DBC substrate
Currently, stress analysis on direct bonded copper (DBC) is mainly based on a model with
symmetrical top and bottom copper layers. These analyses provide thermal-mechanical …
symmetrical top and bottom copper layers. These analyses provide thermal-mechanical …
Contribution à l'intégration des convertisseurs de puissance en 3D
L Ménager - 2008 - theses.fr
Dans les modules de puissance actuels, les connexions électriques sont réalisées
généralement par des fils de bonding. Dans certaines applications, nécessitant une densité …
généralement par des fils de bonding. Dans certaines applications, nécessitant une densité …
Élaboration et comparaison de deux modèles de durée de vie des fils d'interconnexion des modules de puissance, l'un basé sur les déformations et l'autre sur les …
N Dornic - 2019 - theses.hal.science
Dans de nombreux domaines, tels que l'industrie des transports ou bien des infrastructures,
la tendance est à l'introduction toujours plus importante d'équipements électriques. De ce …
la tendance est à l'introduction toujours plus importante d'équipements électriques. De ce …