Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation-induced degradation of silicon carbide MOSFETs–A review
Abstract Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) have gained significant attention due to their ability to achieve lower on …
(MOSFETs) have gained significant attention due to their ability to achieve lower on …
Space radiation effects on SiC power device reliability
JM Lauenstein, MC Casey, RL Ladbury… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …
catastrophic failure. Test procedures and data interpretation must consider the impact that …
Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout
(SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly …
(SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly …
Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices
Ion-induced degradation and catastrophic failures in high-voltage SiC junction barrier
Schottky power diodes are investigated. The experimental results agree with earlier data …
Schottky power diodes are investigated. The experimental results agree with earlier data …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part I
C Abbate, G Busatto, D Tedesco… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Experimental characterization of the damage induced to SiC power MOSFETs by heavy-ion
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …
Opportunities in single event effects in radiation-exposed SiC and GaN power electronics
Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …
and must be understood for space and avionics applications involving exposure to various …
Impact of heavy-ion range on single-event effects in silicon carbide power junction barrier Schottky diodes
Experimental heavy-ion responses of silicon carbide (SiC) junction barrier Schottky (JBS)
diodes are presented. Measured data indicate that heavy ions having range less than the …
diodes are presented. Measured data indicate that heavy ions having range less than the …