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Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?
Y Ma, H Liang, X Guan, S Xu, M Tao, X Liu… - Nanoscale …, 2024 - pubs.rsc.org
With distinctive advantages spanning excellent flexibility, rich physical properties, strong
electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered …
electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered …
Structural, light emitting, and photoelectrical properties of multilayered 2D mixed alloys of gallium monochalcogenides
CH Ho, LC Muhimmah - Materials Science and Engineering: R: Reports, 2024 - Elsevier
Gallium monochalcogenides (GaX, where X represents Te, Se, or S) have attracted
significant attention in the development of 2D semiconductor materials owing to their specific …
significant attention in the development of 2D semiconductor materials owing to their specific …
Temperature Dependence of the Band Gap and Exciton Photoreflectance in Layered Gallium Telluride
CC Sta. Maria, PH Wu… - … Applied Materials & …, 2025 - ACS Publications
Among Group III-A metal monochalcogenides, gallium telluride (GaTe) is one of the less
studied materials in terms of applications and optical characterization. For the temperature …
studied materials in terms of applications and optical characterization. For the temperature …
[HTML][HTML] Photoelectrochemical behavior of GaTe nanoflakes prepared by exfoliation
Gallium telluride (GaTe), a layered semiconductor, was investigated in the
photoelectrochemical (PEC) hydrogen evolution reaction (HER). GaTe nanoflakes were …
photoelectrochemical (PEC) hydrogen evolution reaction (HER). GaTe nanoflakes were …
High Crystalline Quality Ta-Doped h-ZnTiO3 Epitaxial Films: Characteristics and Application in UV Detectors
B Zhang, X Ma, HY Zhu, H **ao, J Ma… - ACS Applied Electronic …, 2024 - ACS Publications
Ta-doped h-ZnTiO3 (h-ZnTiO3: Ta) films with an atomic ratio of 0–5% are grown on sapphire
substrates by pulsed laser deposition. The prepared films exhibit n-type semiconductor …
substrates by pulsed laser deposition. The prepared films exhibit n-type semiconductor …
Fabrication and characteristics study of self‐powered and UV–Vis–NIR photodetector based on p‐NiO: Eu nanofibers
Heterojunctions formed between undoped and Eu‐doped NiO nanofibers (NFs) and n‐Si
were fabricated by electrospinning the NiO: Eu NFs onto Si. Since the photoresponse of the …
were fabricated by electrospinning the NiO: Eu NFs onto Si. Since the photoresponse of the …
Homopolar Chemical Bonds Induce In‐Plane Anisotropy in Layered Semiconductors
J Tan, JJ Wang, HM Zhang, HY Zhang, H Li… - Small …, 2024 - Wiley Online Library
Main‐group layered binary semiconductors, in particular, the III–VI alloys in the binary Ga–
Te system are attracting increasing interest for a range of practical applications. The III–VI …
Te system are attracting increasing interest for a range of practical applications. The III–VI …