Variability in resistive memories
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
[HTML][HTML] Parameter extraction techniques for the analysis and modeling of resistive memories
A revision of the different numerical techniques employed to extract resistive switching (RS)
and modeling parameters is presented. The set and reset voltages, commonly used for …
and modeling parameters is presented. The set and reset voltages, commonly used for …
Holistic variability analysis in resistive switching memories using a Two-Dimensional Variability Coefficient
We present a new methodology to quantify the variability of resistive switching memories.
Instead of statistically analyzing few data points extracted from current versus voltage (I–V) …
Instead of statistically analyzing few data points extracted from current versus voltage (I–V) …
[HTML][HTML] Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
We have analyzed variability in resistive memories (Resistive Random Access Memories,
RRAMs) making use of advanced numerical techniques to process experimental …
RRAMs) making use of advanced numerical techniques to process experimental …
3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach
D Maldonado, A Cantudo, FM Gómez-Campos… - Materials …, 2024 - pubs.rsc.org
A 3D simulation of conductive nanofilaments (CNFs) in multilayer hexagonal-BN memristors
is performed. To do so, a simulation tool based on circuit breakers is developed including for …
is performed. To do so, a simulation tool based on circuit breakers is developed including for …
Conductance quantization in h-bn memristors
Memristive devices made of multilayer hexagonal boron nitride are attracting much attention
for information storage, computation, encryption, and communication. Generating multilevel …
for information storage, computation, encryption, and communication. Generating multilevel …
[HTML][HTML] An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
An in-depth simulation and experimental study has been performed to analyze thermal
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model
Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …
their experimental data using a compact representation without dealing with the …
Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
Resistive switching devices based on the Au/Ti/TiO2/Au stack were developed. In addition to
standard electrical characterization by means of I–V curves, scanning thermal microscopy …
standard electrical characterization by means of I–V curves, scanning thermal microscopy …
Non-uniform spline quasi-interpolation to extract the series resistance in resistive switching memristors for compact modeling purposes
An advanced new methodology is presented to improve parameter extraction in resistive
memories. The series resistance and some other parameters in resistive memories are …
memories. The series resistance and some other parameters in resistive memories are …