To take full advantage of recent and anticipated improvements in the performance of organic
semiconductors employed in organic transistors, the high contact resistance arising at the …

This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …

With the rapid development of advanced technologies in the Internet of Things era, higher
requirements are needed for next‐generation electronic devices. Fortunately, organic thin …

A charge-based compact model for the bias-dependent low-frequency noise in organic thin-
film transistors is presented. The model combines the carrier-number fluctuation effect and …

In this article, the Gaussian density of states (DOSs) in organic semiconductors is taken into
account in order to derive a charge-based compact model for high-speed organic …

We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs
(OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU …

In this study, the homojunction thin-film transistors (TFTs) with amorphous indium gallium
zinc oxide (a-IGZO) as active channel layers and source/drain electrodes were fabricated by …

The development of organic thin-film transistors (TFTs) for high-frequency applications
requires a detailed understanding of the intrinsic and extrinsic factors that influence their …

In this roadmap we consider the status and challenges of technologies that use the
properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as …

We have developed models for three different short-channel effects [subthreshold-swing
degradation, threshold-voltage roll-off, and drain-induced barrier lowering (DIBL)] in …