A class‐AB flipped voltage follower cell with high symmetrical slew rate and high current sourcing/sinking capability
The paper presents a class‐AB flipped voltage follower (FVF) cell based on quasi‐floating
gate and bulk‐driven techniques. The quasi‐floating gate technique is used to increase the …
gate and bulk‐driven techniques. The quasi‐floating gate technique is used to increase the …
A very low output resistance and wide-swing class-AB level-shifted folded flipped voltage follower cell
The paper presents a class-AB flipped voltage follower (FVF) cell. In contrast to previous
works in the literature, FVF cell, level shifter and folded FVF cell are merged in the proposed …
works in the literature, FVF cell, level shifter and folded FVF cell are merged in the proposed …
[PDF][PDF] Design of current controlled instrumental amplifier by using complementary metallic oxide semiconductor technology
In this paper, a complementary metal oxide semiconductor (CMOS) instrumental amplifier
was designed and implemented in order to provide the possibility of controlling the current …
was designed and implemented in order to provide the possibility of controlling the current …
Design of wide dynamic range MOS current mirror using nano dimension MOS field effect transistor
A nanoscale metal oxide semiconductor field effect transistor based current mirror circuit
operating in a sub volt supply for low power analog applications has been proposed in this …
operating in a sub volt supply for low power analog applications has been proposed in this …
High slew-rate and very-low output resistance class-ab flipped voltage follower cell for low-voltage low-power analog circuits
A low output resistance and high slew rate class-AB flipped voltage follower (FVF) cell is
presented in this paper. The proposed FVF cell consists of cascoding transistor which …
presented in this paper. The proposed FVF cell consists of cascoding transistor which …
High slew rate and low output resistance class-AB flipped voltage follower cell with increased current driving capability
The paper proposes a class-AB flipped voltage follower (FVF) cell, in which the bulk-driven
transistor is used as an input transistor with a replica-biased scheme to eliminate the DC …
transistor is used as an input transistor with a replica-biased scheme to eliminate the DC …
Class-AB flipped voltage follower cell with high current driving capability and low output resistance for high frequency applications
In this paper, a class-AB flipped voltage follower cell with high current driving capability is
proposed. The proposed flipped voltage follower (FVF) cell offers increased current sourcing …
proposed. The proposed flipped voltage follower (FVF) cell offers increased current sourcing …
Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower
The application of the flipped voltage follower to implement two high-performance circuits is
presented:(1) The first is a class AB cascode flipped voltage follower that shows an …
presented:(1) The first is a class AB cascode flipped voltage follower that shows an …
A wide-swing class-AB level-shifted bulk-driven folded flipped voltage follower cell with the low output resistance
A high-performance class-AB flipped voltage follower (FVF) cell consisting of a level shifter,
a bulk-driven transistor, and a folding transistor is presented in this paper. The level shifter …
a bulk-driven transistor, and a folding transistor is presented in this paper. The level shifter …
Design Considerations for Ultra Low Power Analog Building Blocks and DC Solid State Transformers in Medium Voltage Applications
M Gangineni - 2023 - search.proquest.com
Design Considerations for Ultra Low Power Analog Building Blocks and DC Solid State
Transformers in Medium Voltage Applications Abstract Ultra low-power high performance …
Transformers in Medium Voltage Applications Abstract Ultra low-power high performance …