Review of injection dependent charge carrier lifetime spectroscopy

Y Zhu, Z Hameiri - Progress in Energy, 2021 - iopscience.iop.org
Abstract Characterization and identification of recombination active defects in photovoltaic
(PV) materials are essential for improving the performance of solar cells, hence, reducing …

Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

Y Zhu, F Rougieux, NE Grant… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However,
recent studies have revealed that detrimental defects can be thermally activated in FZ silicon …

Temperature‐Dependent Lifetime and Photoluminescence Measurements

Z Hameiri, Y Zhu - Photovoltaic Solar Energy: From …, 2024 - Wiley Online Library
Temperature‐dependent measurements are extensively employed in assessing
photovoltaic materials and devices. An obvious reason is that solar cells often operate at …

Investigation of two-level defects in injection dependent lifetime spectroscopy

Y Zhu, C Sun, T Niewelt, G Coletti, Z Hameiri - Solar Energy Materials and …, 2020 - Elsevier
In the majority of studies involving injection dependent lifetime spectroscopy, it is assumed
that the investigated defect is a single-level defect following Shockley-Read-Hall …

[LIVRE][B] Assessment and Application of Defect Characterization via Lifetime Spectroscopy in high purity c-Si

R Post - 2023 - kops.uni-konstanz.de
To ensure the best possible efficiency of a solar cell it is necessary to restrict the losses on
every performance level. The very first performance level is the material and its properties …

Spatially resolved defects parameters of the D1 dislocation center in silicon using temperature-and injection-dependent hyperspectral photoluminescence map**

RL Chin, M Pollard, Z Hameiri - Solar Energy Materials and Solar Cells, 2021 - Elsevier
The sub-bandgap photoluminescence (PL) arising from dislocations in crystalline silicon
(known as “D-lines”) has been studied for over half a century. However, many properties of …

17.1 Temperature-Dependent Lifetime Spectroscopy Identification of defects in silicon wafers and cells is essential for their elimination (Graff 2013). Determination of …

Z Hameiri, Y Zhu - … From Fundamentals to Applications, Volume 2, 2024 - books.google.com
The term “lifetime spectroscopy" describes several types of measurement techniques (Rein
2006; Zhu and Hameiri 2021). Temperature-dependent lifetime spectroscopy (TDLS) is …

Mathematical model of the development of manufacturing defects in the surface layer of substrates of MOEMS'functional components

İ Nevlıudov, M Omarov, O Chala - Eskişehir Technical University …, 2020 - dergipark.org.tr
A mathematical model of the development of manufacturing defects, with the prediction of
the random component of the model in the substrates of functional components of MOEMS …

Automation of Mathematical Modeling of Physical and Technological Processes in the Electronic Devices Manufacture

I Nevliudov, O Chala, I Botsman, O Klymenko… - 2021 - openarchive.nure.ua
Анотація The variant of automation of the mathematical modeling process for forecasting
the technological process parameters of manufacturing nano and microelectromechanical …