The excellent properties of III–V semiconductors make them intriguing candidates for next-
generation electronics and optoelectronics. Their nanowire (NW) counterparts further …

Accurate detection of weak optical signals is a key function for a wide range of applications.
A key performance parameter is the receiver signal-to-noise ratio, which depends on the …

Axially doped p–i–n InAs0. 93Sb0. 07 nanowire arrays have been grown on Si substrates
and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a …

Mid-wavelength infrared (MWIR) detection is useful in a variety of scientific and military
applications. Avalanche photodiodes can provide an advantage for detection as their …

InAs1–x Sb x nanowires have recently attracted interest for infrared sensing applications
due to the small bandgap and high thermal conductivity. However, previous reports on …

We report two InAs avalanche photodiode structures with very low background do** in the
depletion region. Uniform electric fields and thick depletion regions have been achieved …

An Indium Arsenide Bismide photodiode has been grown, fabricated, and characterized to
evaluate its performance in the Mid Wave Infrared region of the spectrum. Spectral response …

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-
APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a …

We report on a mid-wavelength (MW) type II superlattice (T2SL) photodetector using Ga-free
InAs/InAsSb SL structure. X-ray diffraction (XRD) measurements indicate that the strained SL …

We report the demonstration of a germanium-tin multiple quantum well (Ge 0.9 Sn 0.1 MQW)-
on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The …