Emerging gallium nitride based devices

SN Mohammad, AA Salvador… - Proceedings of the …, 1995 - ieeexplore.ieee.org
Wide bandgap GaN has long been sought for its applications to blue and UV emitters and
high temperature/high power electronic devices. Recent introduction of commercial blue and …

Progress and prospects of group-III nitride semiconductors

SN Mohammad, H Morkoç - Progress in quantum electronics, 1996 - Elsevier
We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

Artificial neural networks for RF and microwave design-from theory to practice

QJ Zhang, KC Gupta… - IEEE transactions on …, 2003 - ieeexplore.ieee.org
Neural-network computational modules have recently gained recognition as an
unconventional and useful tool for RF and microwave modeling and design. Neural …

The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications

RJ Trew, JB Yan, PM Mock - Proceedings of the IEEE, 1991 - ieeexplore.ieee.org
The potential of SiC and diamond for producing microwave and millimeter-wave electronic
devices is reviewed. It is shown that both of these materials possess characteristics that may …

Knowledge-based neural models for microwave design

F Wang, QJ Zhang - IEEE Transactions on Microwave Theory …, 1997 - ieeexplore.ieee.org
Neural networks have recently been introduced to the microwave area as a fast and flexible
vehicle to microwave modeling, simulation and optimization. In this paper, a novel neural …

[BOG][B] The RF and microwave handbook

M Golio - 2000 - taylorfrancis.com
The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …

A neural network modeling approach to circuit optimization and statistical design

AH Zaabab, QJ Zhang, M Nakhla - IEEE Transactions on …, 1995 - ieeexplore.ieee.org
The trend of using accurate models such as physics-based FET models, coupled with the
demand for yield optimization results in a computationally challenging task. This paper …

AlGaN/GaN HFET reliability

RJ Trew, DS Green, JB Shealy - IEEE Microwave magazine, 2009 - ieeexplore.ieee.org
High-voltage AlGaN/GaN HFETs can produce high RF output power with nearly ideal power-
added efficiency. But widespread adoption of these HFETs has been limited by a lack of …

Computer-aided design of RF and microwave circuits and systems

MB Steer, JW Bandler… - IEEE Transactions on …, 2002 - ieeexplore.ieee.org
The history of RF and microwave computer-aided engineering is documented in the annals
of the IEEE Microwave Theory and Techniques Society. The era began with elaborate …

Neural networks for microwave modeling: Model development issues and nonlinear modeling techniques

VK Devabhaktuni, MCE Yagoub, Y Fang… - … Journal of RF and …, 2001 - Wiley Online Library
Artificial neural networks (ANN) recently gained attention as a fast and flexible vehicle to
microwave modeling and design. Fast neural models trained from measured/simulated …