Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides M CuO Ch (M= Bi, La; Ch= S, Se, Te): effects of electronic …

H Hiramatsu, H Yanagi, T Kamiya, K Ueda… - Chemistry of …, 2008 - ACS Publications
Crystal structures, optoelectronic properties, and electronic structures of layered
oxychalcogenides BiCuO Ch (Ch= S, Se, Te) have been compared to those of LaCuO Ch …

Heavy hole do** of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

H Hiramatsu, K Ueda, H Ohta, M Hirano… - Applied physics …, 2007 - pubs.aip.org
The high density hole do** (1.7× 10 21 cm− 3) for a wide gap (E g=∼ 2.8 eV) p-type
semiconductor was achieved on 40 nm thick Mg-doped LaCuOSe epitaxial films. These …

Unrevealed electronic and optical properties of the layered oxychalcogenides (LaO) CuCh (Ch= S, Se, Te): A density-functional study

S Muhammady, IM Sutjahja, A Rusydi… - Japanese Journal of …, 2017 - iopscience.iop.org
We calculate the electronic and optical properties of layered oxychalcogenide (LaO) CuCh
(Ch= S, Se, Te) systems by using generalized gradient approximation method based on …

Epitaxial film growth and optoelectrical properties of layered semiconductors, LaMnXO (X= P, As, and Sb)

K Kayanuma, H Hiramatsu, T Kamiya… - Journal of Applied …, 2009 - pubs.aip.org
Thin films of LaMn XO (⁠ X= P⁠, As, and Sb), which are isostructural compounds of the
newly discovered superconductor, LaFeAsO, were grown epitaxially on MgO (001) …

Semiconductive K2MSbS3(SH) (M = Zn, Cd) Featuring One-Dimensional 1[M2Sb2S6(SH2)]4– Chains

X Zhang, N Yi, R Hoffmann, C Zheng, J Lin… - Inorganic …, 2016 - ACS Publications
We synthesized two one-dimensional compounds K2MSbS3 (SH)(M= Zn, Cd) at 473 K,
using thiourea as reactive flux. The compounds crystallize in the triclinic space group P 1̅ …

Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application

H Hiramatsu, Y Kamihara, H Yanagi, K Ueda… - Journal of the European …, 2009 - Elsevier
Optoelectronic properties and device applications of layered mixed-anion compounds such
as oxychalcogenide LaCuOCh (Ch= chalcogen) and oxypnictide LaTMOPn (TM= 3d …

Apparent bipolarity and Seebeck sign inversion in a layered semiconductor: LaZnOP

K Kayanuma, H Hiramatsu, M Hirano, R Kawamura… - Physical Review B …, 2007 - APS
The optoelectronic properties of a layered mixed-anion compound, LaZnOP, which is
expected to be a wide gap n-type semiconductor, are examined. LaZnOP shows electronic …

Optoelectronic properties and electronic structure of YCuOSe

K Ueda, K Takafuji, H Yanagi, T Kamiya… - Journal of applied …, 2007 - pubs.aip.org
YCuOSe was prepared by solid-state reaction, and its wide gap semiconducting properties
were examined. The single phase of YCuOSe was obtained in a limited temperature range …

Magnetic and Dielectric Properties of InFe2O4, InFeCuO4, and InGaCuO4

K Yoshii, N Ikeda, Y Okajima, Y Yoneda… - Inorganic …, 2008 - ACS Publications
The magnetic and dielectric properties of InFe2O4, InFeCuO4, and InGaCuO4 have been
investigated. All these materials are isostructural with R Fe2O4 (R= Y, Ho− Lu), which shows …

Investigation of structural and electronic properties by pnictogen substitution in the layered oxypnictides (LaO)ZnPn (Pn = P, As, Sb)

S Muhammady, AS Erlyanti, R Widita… - International Journal of …, 2020 - Wiley Online Library
We study the structural and electronic properties of p‐type layered oxypnictides (LaO) ZnPn
(Pn= P, As, Sb), calculated by first principles. Pn substitution from P to Sb increases D2d …