Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

High thermal conductivity electronic materials are critical components for high-performance
electronic and photonic devices as both active functional materials and thermal …

Carbon foams (CFs) possess high storage capacity, good electronic conductivity and superb
mechanical strength, which demonstrate promising applications in many engineering fields …

Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …

Rapid advancements in nanotechnologies for energy conversion and transport applications
urgently require a further understanding of interfacial thermal transport and enhancement of …

The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …