The Hubbard model is an essential tool for understanding many-body physics in condensed
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …

Atomically precise fabrication has an important role to play in develo** atom‐based
electronic devices for use in quantum information processing, quantum materials research …

Over the past two decades, prototype devices for future classical and quantum computing
technologies have been fabricated by using scanning tunneling microscopy and hydrogen …

Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …

Atomically precise donor-based quantum devices are a promising candidate for solid-state
quantum computing and analog quantum simulations. However, critical challenges in …

The controlled confinement of the metallic delta-layer to a single atomic plane has so far
remained an unsolved problem. In the present study, the delta-type structure with atomic …

The recently-developed ability to control phosphorous-do** of silicon at an atomic level
using scanning tunneling microscopy, a technique known as atomic precision advanced …

Current atomically-precise fabrication methods in Si utilize a scanning tunneling microscope
(STM) to pattern a monatomic resist adsorbed on Si (100). Recent interest in the use of Cl …

The atomically precise placement of dopants in semiconductors using scanning tunneling
microscopes has been used to create planar dopant-based devices, enabling the …

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped
structures in Si with atomistic precision, with applications from tunnel field-effect transistors …