Ultrathin organic films grown by organic molecular beam deposition and related techniques

SR Forrest - Chemical reviews, 1997 - ACS Publications
During the past decade, enormous progress has been made in growing ultrathin organic
films and multilayer structures with a wide range of exciting optoelectronic properties. This …

Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT: MEH-PPV/Al organic devices: Comparison study

B Gunduz, IS Yahia, F Yakuphanoglu - Microelectronic Engineering, 2012 - Elsevier
The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT: MEH-
PPV/Al organic devices have been investigated by current–voltage and capacitance …

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

ME Aydin, F Yakuphanoglu, JH Eom… - Physica B: Condensed …, 2007 - Elsevier
The electrical characterization of the Al/poly [2-methoxy-5-(2′-ethylhexyloxy)-1, 4-
phenylenevinylene](MEH-PPV)/p-Si structure has been investigated by current–voltage and …

Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode

T Kılıçoğlu - Thin Solid Films, 2008 - Elsevier
An Al/Methyl Red/p-Si sandwich Schottky barrier diode (SBD) has been fabricated by adding
a solution of the organic compound Methyl Red in chloroform onto a p-Si substrate, and then …

Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕ n-Si and Sn/rhodamine-101∕ p-Si Schottky barrier diodes

M Çakar, N Yıldırım, Ş Karataş, C Temirci… - Journal of applied …, 2006 - pubs.aip.org
The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type
Si substrate has been formed by means of the evaporation process and the Sn/rhodamine …

Electrical analysis of organic dye-based MIS Schottky contacts

Ö Güllü, A Türüt - Microelectronic Engineering, 2010 - Elsevier
In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an
organic film on p-Si substrate. Metal (Al)/interlayer (Orange GOG)/semiconductor (p-Si) MIS …

Organic/IV, III-V semiconductor hybrid solar cells

PL Ong, IA Levitsky - Energies, 2010 - mdpi.com
We present a review of the emerging class of hybrid solar cells based on organic-
semiconductor (Group IV, III-V), nanocomposites, which states separately from dye …

Fabrication and characterization of 4-tricyanovinyl-N, N-diethylaniline/p-silicon hybrid organic–inorganic solar cells

MM El-Nahass, HM Zeyada, KF Abd-El-Rahman… - Solar energy materials …, 2007 - Elsevier
Hybrid organic–inorganic solar cell was fabricated by thin film of 4-tricyanovinyl-N, N-
diethylaniline deposited on p-Si substrates. The capacitance–voltage characteristics …

High barrier Schottky diode with organic interlayer

Ö Güllü, Ş Aydoğan, A Türüt - Solid State Communications, 2012 - Elsevier
A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by
using a solution cast process. An effective barrier height as high as 0.82 eV has been …

Square, Hexagonal, and Row Phases of PTCDA and PTCDI on Ag− Si (111)× R 30°

JC Swarbrick, J Ma, JA Theobald… - The Journal of …, 2005 - ACS Publications
We have investigated the ordered phases of the perylene derivatives perylene-3, 4, 9, 10-
tetracarboxylic-3, 4, 9, 10-dianhydride (PTCDA) and the imide analogue PTCDI on the Ag …