GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …

GeSn alloys are promising candidates for complementary metal‐oxide‐semiconductor‐
compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has …

The short‐wave infrared (SWIR) is an underexploited portion of the electromagnetic
spectrum in metasurface‐based nanophotonics despite its strategic importance in sensing …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was
grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn …

Silicon-compatible short-and midwave infrared emitters are highly sought after for on-chip
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …

Epitaxial Sn-containing group-IV semiconductors (Si) GeSn relevant for optoelectronics are
inherently strained and supersaturated in Sn and thus can suffer instabilities that are still to …