Visible light-driven indium-gallium-zinc-oxide optoelectronic synaptic transistor with defect engineering for neuromorphic computing system and artificial intelligence
There has been considerable interest in the development of optoelectronic synaptic
transistors with synaptic functions and neural computations. These neuromorphic devices …
transistors with synaptic functions and neural computations. These neuromorphic devices …
Oxide Ionic Neuro-Transistors for Bio-inspired Computing
Y He, Y Zhu, Q Wan - Nanomaterials, 2024 - mdpi.com
Current computing systems rely on Boolean logic and von Neumann architecture, where
computing cells are based on high-speed electron-conducting complementary metal-oxide …
computing cells are based on high-speed electron-conducting complementary metal-oxide …
Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator
DH Kim, YH Kwon, NJ Seong, KJ Choi… - ACS applied materials …, 2023 - ACS Publications
Artificial synapses with ideal functionalities are essential in hardware neural networks to
allow for energy-efficient analog computing. Electrolyte-gated transistors (EGTs) are …
allow for energy-efficient analog computing. Electrolyte-gated transistors (EGTs) are …
Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor
Amorphous indium–gallium–zinc oxide (IGZO)‐based optical synaptic transistor using
visible light as the signal that shows a clear difference between long‐term memory (LTM) …
visible light as the signal that shows a clear difference between long‐term memory (LTM) …
High‐Density, Crosstalk‐Free, Flexible Electrolyte‐Gated Synaptic Transistors Array via All‐Photolithography for Multimodal Neuromorphic Computing
L Yuan, T Zhao, J Dai, L Xue, X Zhang… - Advanced Functional …, 2025 - Wiley Online Library
High‐density bio‐electrolyte‐gated synaptic transistors (BEGTs) array are promising for
constructing neuromorphic computing architectures. Due to the bulk ion conductivity and the …
constructing neuromorphic computing architectures. Due to the bulk ion conductivity and the …
Improvement in energy consumption and operational stability of electrolyte-gated synapse transistors using atomic-layer-deposited HfO2 thin films
DH Kim, SM Yoon - Materials Science in Semiconductor Processing, 2023 - Elsevier
Electrolyte-gated transistors (EGTs) are promising candidates for artificial synaptic devices,
due to lower energy consumption by forming the electric double layer to modulate the …
due to lower energy consumption by forming the electric double layer to modulate the …
Solution-based surface modification method for high-performance ZnO transistors
Q Wang, J Dong, J Lin, D Han, X Zhang - Applied Surface Science, 2025 - Elsevier
A solution-based surface modification method is first proposed for improving electrical
performance of the ZnO transistors. The ZnO transistors are infiltrated for treatment in the …
performance of the ZnO transistors. The ZnO transistors are infiltrated for treatment in the …
Electrolyte‐Gated Transistor Array (20× 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning
W Zhang, J Li, M Li, Y Li, H Lian, W Gao, B Sun… - Small …, 2024 - Wiley Online Library
Compute‐in‐memory (CIM) is a pioneering approach using parallel data processing to
eliminate traditional data transmission bottlenecks for faster, energy‐efficient data handling …
eliminate traditional data transmission bottlenecks for faster, energy‐efficient data handling …