Visible light-driven indium-gallium-zinc-oxide optoelectronic synaptic transistor with defect engineering for neuromorphic computing system and artificial intelligence

J Chung, K Park, GI Kim, JB An, S Jung, DH Choi… - Applied Surface …, 2023 - Elsevier
There has been considerable interest in the development of optoelectronic synaptic
transistors with synaptic functions and neural computations. These neuromorphic devices …

Oxide Ionic Neuro-Transistors for Bio-inspired Computing

Y He, Y Zhu, Q Wan - Nanomaterials, 2024 - mdpi.com
Current computing systems rely on Boolean logic and von Neumann architecture, where
computing cells are based on high-speed electron-conducting complementary metal-oxide …

Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator

DH Kim, YH Kwon, NJ Seong, KJ Choi… - ACS applied materials …, 2023 - ACS Publications
Artificial synapses with ideal functionalities are essential in hardware neural networks to
allow for energy-efficient analog computing. Electrolyte-gated transistors (EGTs) are …

Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor

D Kim, WK Min, HT Kim, J Chung… - Advanced Optical …, 2022 - Wiley Online Library
Amorphous indium–gallium–zinc oxide (IGZO)‐based optical synaptic transistor using
visible light as the signal that shows a clear difference between long‐term memory (LTM) …

High‐Density, Crosstalk‐Free, Flexible Electrolyte‐Gated Synaptic Transistors Array via All‐Photolithography for Multimodal Neuromorphic Computing

L Yuan, T Zhao, J Dai, L Xue, X Zhang… - Advanced Functional …, 2025 - Wiley Online Library
High‐density bio‐electrolyte‐gated synaptic transistors (BEGTs) array are promising for
constructing neuromorphic computing architectures. Due to the bulk ion conductivity and the …

Improvement in energy consumption and operational stability of electrolyte-gated synapse transistors using atomic-layer-deposited HfO2 thin films

DH Kim, SM Yoon - Materials Science in Semiconductor Processing, 2023 - Elsevier
Electrolyte-gated transistors (EGTs) are promising candidates for artificial synaptic devices,
due to lower energy consumption by forming the electric double layer to modulate the …

Solution-based surface modification method for high-performance ZnO transistors

Q Wang, J Dong, J Lin, D Han, X Zhang - Applied Surface Science, 2025 - Elsevier
A solution-based surface modification method is first proposed for improving electrical
performance of the ZnO transistors. The ZnO transistors are infiltrated for treatment in the …

Electrolyte‐Gated Transistor Array (20× 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

W Zhang, J Li, M Li, Y Li, H Lian, W Gao, B Sun… - Small …, 2024 - Wiley Online Library
Compute‐in‐memory (CIM) is a pioneering approach using parallel data processing to
eliminate traditional data transmission bottlenecks for faster, energy‐efficient data handling …