A 24–30-GHz 256-element dual-polarized 5G phased array using fast on-chip beam calculators and magnetoelectric dipole antennas
We present a 24–30-GHz 256-element dual-polarization transceiver (TRX) phased array
based on a 16-element beamformer integrated circuit (BF-IC), 2-element frequency …
based on a 16-element beamformer integrated circuit (BF-IC), 2-element frequency …
A 22–44-GHz phased-array receive beamformer in 45-nm CMOS SOI for 5G applications with 3–3.6-dB NF
This article presents a 22-44-GHz phased-array receive beamformer in the GlobalFoundries
(GF) 45-nm CMOS SOI. The channel includes a wideband single-ended to differential low …
(GF) 45-nm CMOS SOI. The channel includes a wideband single-ended to differential low …
A 22.9–38.2-GHz dual-path noise-canceling LNA with 2.65–4.62-dB NF in 28-nm CMOS
In this article, a 22.9–38.2-GHz dual-path noise-canceling low noise amplifier (LNA) is
proposed, which can achieve a low noise figure (NF) by reducing the noise of both paths …
proposed, which can achieve a low noise figure (NF) by reducing the noise of both paths …
A 1.7-dB minimum NF, 22–32-GHz low-noise feedback amplifier with multistage noise matching in 22-nm FD-SOI CMOS
B Cui, JR Long - IEEE Journal of Solid-State Circuits, 2020 - ieeexplore.ieee.org
A low-noise feedback amplifier (LNA) with interstage noise matching is implemented in 22-
nm fully depleted silicon-on-insulator (SOI)-CMOS technology. Minimum noise figure (NF) is …
nm fully depleted silicon-on-insulator (SOI)-CMOS technology. Minimum noise figure (NF) is …
A Ka-band phase-compensated variable-gain CMOS low-noise amplifier
A variable-gain low-noise amplifier implemented in a 65-nm CMOS process for a
beamforming front-end chip is presented, of which the phase remains constant during gain …
beamforming front-end chip is presented, of which the phase remains constant during gain …
A wideband 28-GHz transmit–receive front-end for 5G handset phased arrays in 40-nm CMOS
This paper reports a transmit-receive (Tx-Rx) front-end (FE) in bulk CMOS targeting fifth-
generation (5G) mobile user equipment (UE)-phased arrays. Block-level specifications are …
generation (5G) mobile user equipment (UE)-phased arrays. Block-level specifications are …
A 28-GHz CMOS LNA with Stability-Enhanced Gm-Boosting Technique Using Transformers
S Kong, HD Lee, S Jang, J Park… - 2019 IEEE Radio …, 2019 - ieeexplore.ieee.org
In this paper, we propose a low noise amplifier (LNA) using ag m-boosting technique with
improved stability using transformers in the millimeter-wave (mm-Wave) band. The …
improved stability using transformers in the millimeter-wave (mm-Wave) band. The …
A K-/Ka-Band Broadband Low-Noise Amplifier Based on the Multiple Resonant Frequency Technique
C Zhao, D Duan, Y **ong, H Liu, Y Yu… - … on Circuits and …, 2022 - ieeexplore.ieee.org
A wideband CMOS low-noise amplifier (LNA) with multiple resonant frequencies is
demonstrated in this article. A common source (CS) with inductive degeneration topology is …
demonstrated in this article. A common source (CS) with inductive degeneration topology is …
A 27–46-GHz low-noise amplifier with dual-resonant input matching and a transformer-based broadband output network
This letter presents a 27-46-GHz low-noise amplifier (LNA) in a 45-nm CMOS silicon-on-
insulator (SOI) process. Two circuit techniques are employed to enhance the LNA …
insulator (SOI) process. Two circuit techniques are employed to enhance the LNA …
A 20–42-GHz IQ receiver in 22-nm CMOS FD-SOI with 2.7–4.2-dB NF and− 25-dBm IP1dB for wideband 5G systems
This article presents a 20–42-GHz in-phase and quadrature (IQ) receiver in 22-nm CMOS
fully depleted silicon on insulator (FD-SOI). The receiver includes a wideband low noise …
fully depleted silicon on insulator (FD-SOI). The receiver includes a wideband low noise …