Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

We have investigated the relationship between improved electrical properties of Al 2 O
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …

We report the first demonstration of fully vertical power MOSFETs on 6.6--thick GaN, grown
on a 6-inch Si substrate by metal-organic chemical vapor deposition. A robust fabrication …

In this paper, we carried out a systematic comparison between the enhancement-mode GaN-
based fully recessed metal-insulator-semiconductor field-effect transistors (MIS-FETs) and …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

The spontaneous formation of a Ga-oxide (GaO x⁠) intermediate layer at the GaN/SiO 2
interface has been reported during the SiO 2 deposition on the GaN substrate. In this study …

This paper presents a systematic characterization of electronic states at insulators/(Al) GaN
interfaces, particularly focusing on insulator/AlGaN/GaN structures. First, we review …

To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS)
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …