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Comparison of SiNx‐Based Surface Passivation Between Germanium and Silicon
Germanium (Ge) has attracted much attention as a promising channel material in nanoscale
metal–oxide–semiconductor devices and near‐infrared sensing because of its high carrier …
metal–oxide–semiconductor devices and near‐infrared sensing because of its high carrier …
Imaging reconfigurable molecular concentration on a graphene field-effect transistor
The spatial arrangement of adsorbates deposited onto a clean surface under vacuum
typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to …
typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to …
Exceptional charge transport properties of graphene on germanium
The excellent charge transport properties of graphene suggest a wide range of application
in analog electronics. While most practical devices will require that graphene be bonded to a …
in analog electronics. While most practical devices will require that graphene be bonded to a …
Influence of the oxidizing species on the Ge dangling bonds at the (100) Ge/GeO2 interface
The nature of the defects present at various Ge/GeO 2 interfaces has been investigated by
means of electrically detected magnetic resonance (EDMR) spectroscopy. GeO 2 thin films …
means of electrically detected magnetic resonance (EDMR) spectroscopy. GeO 2 thin films …
H2O-and O3-based atomic layer deposition of high-κ dielectric films on GeO2 passivation layers
Atomic layer deposition (ALD) is considered an enabling technique for the deposition of
dielectrics on sensitive surfaces such as germanium. Proper control of the interfacial layer …
dielectrics on sensitive surfaces such as germanium. Proper control of the interfacial layer …
Impurity diffusion, point defect engineering, and surface/interface passivation in germanium
In recent years germanium has been emerging as a mainstream material that could have
important applications in the microelectronics industry. The principle aim of this study is to …
important applications in the microelectronics industry. The principle aim of this study is to …
Thermal annealing activates amplified photoluminescence of germanium metabolically doped in diatom biosilica
There is significant interest in the fabrication of germanium (Ge) doped silica for
optoelectronic device applications. In this study, highly photoluminescent Ge centers …
optoelectronic device applications. In this study, highly photoluminescent Ge centers …
Positronium formation via excitonlike states on Si and Ge surfaces
Recent experiments combining lifetime and laser spectroscopy of positronium (Ps) show that
these atoms are emitted from p-Si (100) at a rate that depends on the sample temperature …
these atoms are emitted from p-Si (100) at a rate that depends on the sample temperature …
Atomic imaging and modeling of H2O2 (g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge (100) surface
T Kaufman-Osborn, EA Chagarov… - The Journal of Chemical …, 2014 - pubs.aip.org
Passivation, functionalization, and atomic layer deposition nucleation via H 2 O 2 (g) and
trimethylaluminum (TMA) dosing was studied on the clean Ge (100) surface at the atomic …
trimethylaluminum (TMA) dosing was studied on the clean Ge (100) surface at the atomic …
Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe (001) surface via H2O2 (g) and trimethylaluminum …
T Kaufman-Osborn, EA Chagarov, SW Park, B Sahu… - Surface science, 2014 - Elsevier
Passivation, functionalization, and atomic layer deposition (ALD) via H 2 O 2 (g) and
trimethylaluminum (TMA) dosing were studied on the clean Si 0.6 Ge 0.4 (001) surface at the …
trimethylaluminum (TMA) dosing were studied on the clean Si 0.6 Ge 0.4 (001) surface at the …