Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten
YS Choi, B York, N Smith - US Patent 10,229,723, 2019 - Google Patents
(57) ABSTRACT A spin orbit torque magnetoresistive random access memory (SOT MRAM)
cell includes a magnetic tunnel junction that contains a free layer having two bi-stable …
cell includes a magnetic tunnel junction that contains a free layer having two bi-stable …
Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof
J Lille - US Patent 10,553,783, 2020 - Google Patents
According to an aspect of the present disclosure, an MRAM assembly comprises a substrate,
a plurality of MRAM cells, a plurality of bit lines, each bit line magnetically coupled to one of …
a plurality of MRAM cells, a plurality of bit lines, each bit line magnetically coupled to one of …
Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof
J Lille - US Patent 10,381,551, 2019 - Google Patents
Abstract A Magnetoresistive Random Access Memory (MRAM) assembly includes a first
ferromagnetic shielding component, a second ferromagnetic shielding component, a …
ferromagnetic shielding component, a second ferromagnetic shielding component, a …
Magnetic memory device and method for manufacturing the same
M Shimizu, Y Ohsawa, H Yoda, H Sugiyama… - US Patent …, 2018 - Google Patents
According to one embodiment, a magnetic memory device includes a metal-containing
layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third …
layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third …
Magnetic memory device
A Buyandalai, S Shirotori, Y Ohsawa… - US Patent …, 2019 - Google Patents
According to one embodiment, a magnetic memory device includes a conductive layer, first
to fourth magnetic layers, first and second intermediate layers, and a controller. The …
to fourth magnetic layers, first and second intermediate layers, and a controller. The …
Bottom pinned SOT-MRAM bit structure and method of fabrication
Embodiments of the present disclosure generally relate to data storage and computer
memory systems, and more particularly, to a SOT-MRAM chip architecture. The SOT-MRAM …
memory systems, and more particularly, to a SOT-MRAM chip architecture. The SOT-MRAM …
Magnetization-switching magnetic system
US20170279038A1 - Magnetization-switching magnetic system - Google Patents
US20170279038A1 - Magnetization-switching magnetic system - Google Patents …
US20170279038A1 - Magnetization-switching magnetic system - Google Patents …
Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same
(57) ABSTRACT A spin-orbit-torque (SOT) magnetoresistive random access memory
(MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a …
(MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a …
Scalable spin-orbit torque (SOT) magnetic memory
S Araki - US Patent 10,658,021, 2020 - Google Patents
A magnetic storage device includes a plurality of first wires extending along a first direction
and a plurality of second wires extending along a second direction different from the first …
and a plurality of second wires extending along a second direction different from the first …
Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
T Sasaki - US Patent 11,374,166, 2022 - Google Patents
A spin current magnetization rotational element according to the present disclosure includes
a first ferromagnetic metal layer configured for a direction of magnetization to be changed …
a first ferromagnetic metal layer configured for a direction of magnetization to be changed …