This paper describes the latest and most advanced surface-potential-based model jointly
developed by The Pennsylvania State University and Philips. Specific topics include model …

In this paper, the implications of inversion charge linearization in compact MOS transistor
modeling are discussed. The charge-sheet model provides the basic relation among …

This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …

The constant-current (CC) method uses a current criterion to determine the threshold voltage
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …

The combination of decreasing MOSFET dimensions and increasing use of MOSFETs for
analog and RF application has created the need for advanced compact models for MOSFET …

A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs
with constant current bias at all levels of inversion is presented. This generalized constant …

This paper covers the device modeling aspects of low-power analog CMOS circuit design.
The fundamental limits constraining the design of low-power circuits are first recalled with an …

Polysilicon gate depletion is an important effect that degrades the circuit performance of
deep submicron standard CMOS technologies. A new approach to analytically modeling the …

The EKV MOS transistor model and design methodology evolved from the first weak
inversion transistor models of the 1970's. In this first-hand account, Christian Enz chronicles …

The EKV3. 0 MOS transistor compact model addresses the design and circuit simulation of
analog, digital and RF integrated circuits using advanced sub-100 nm CMOS technologies …