Abstract 3D monolithic integration of logic and memory has been the most sought after
solution to surpass the Von Neumann bottleneck, for which a low-temperature processed …

Abstract Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene,
and transition metal dichalcogenides have attracted intense research attention because of …

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed
specially for accurate analog and RF circuit designs. The popular real-device effects have …

With technology in deep nano scale, the susceptibility of transistors to various aging
mechanisms such as Negative/Positive Bias Temperature Instability (NBTI/PBTI) and Hot …

In integrated circuit design compact models are the abstraction layer which connects
semiconductor physics and circuit simulation. Established compact models like BSIM …

Circuit design requires fast and scalable models which are compatible to modern electronic
design automation tools. For this task typically analytical compact models are preferred …

Editor's note: Process variations, aging and wearout, are nonidealities that lead to
suboptimal system performance and increased power. In order to understand the effects of …

This is the first work to investigate the susceptibility of Negative Capacitance Field-Effect
Transistor (NC-FET) to radiation. Using TCAD models, which are well calibrated with 14nm …

The operation of stacked MOSFET circuit for RF switch application under electrostatic
discharge (ESD) conditions is studied by transmission line pulse (TLP) and transient …

Resistive Random Access Memory (RRAM) technology holds promises to improve the Field
Programmable Gate Array (FPGA) performance, reduce the area footprint, and dramatically …