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Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy
The article showcases a low-cost, low-temperature deposition and HVM technique to
develop single crystalline GeSn alloy epilayers on Gd 2 O 3/Si (111) substrate. First, GeSn …
develop single crystalline GeSn alloy epilayers on Gd 2 O 3/Si (111) substrate. First, GeSn …