Ion bombardment induced surface microstructural modification of aluminum alloy
Z Chen, X Song, Y Luo - Vacuum, 2023 - Elsevier
Surface microstructural modifications of 2A12 aluminum alloy exposed to 60 keV Ar ion
bombardment with the dose of 1× 10 17 ions/cm 2 under vacuum were studied in detail. The …
bombardment with the dose of 1× 10 17 ions/cm 2 under vacuum were studied in detail. The …
Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures
JJ Gu, JH Zhao, MY Bu, SM Wang, L Fan, Q Huang… - Results in Physics, 2022 - Elsevier
In this work, we investigate the radiation damage of 6H-SiC crystals by phosphorus (P) ion
implantation. The 6H-SiC samples were implanted at different energy with the same fluence …
implantation. The 6H-SiC samples were implanted at different energy with the same fluence …
In situ TEM investigations of the microstructural changes and radiation tolerance in SiC nanowhiskers irradiated with He ions at high temperatures
Using in-situ transmission electron microscopy (TEM) with ion irradiation, we investigated
the microstructural changes in silicon carbide nanowhiskers (SiC NWs) which were used as …
the microstructural changes in silicon carbide nanowhiskers (SiC NWs) which were used as …
Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature
The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually
implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2× 10 16 cm− 2 …
implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2× 10 16 cm− 2 …
Effect of SHI irradiation and high temperature annealing on the microstructure of SiC implanted with Ag
Scanning electron microscopy (SEM), Raman spectroscopy and Rutherford backscattering
spectrometry (RBS) were used to study the influence of swift heavy ion (SHI) irradiation and …
spectrometry (RBS) were used to study the influence of swift heavy ion (SHI) irradiation and …
Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures
Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750° C with 120 keV He 2+
and 4 MeV Kr 15+ ions to 10 17 and 4× 10 16 cm− 2, respectively. The Kr 15+ ions …
and 4 MeV Kr 15+ ions to 10 17 and 4× 10 16 cm− 2, respectively. The Kr 15+ ions …
Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence
J Baillet, S Gavarini, N Millard-Pinard, V Garnier… - Journal of Nuclear …, 2018 - Elsevier
Polycrystalline β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering
(SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of …
(SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of …
Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiation
The abundant free surface in nanoporous materials may play a major role in providing ideal
sinks for the removal of radiation-induced defects. To study the response of these materials …
sinks for the removal of radiation-induced defects. To study the response of these materials …
Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se
Isothermal annealing studies of selenium-implanted silicon carbide (SiC) were conducted at
temperatures> 1200° C. Implantation were performed using Se ions of 200 keV to a fluence …
temperatures> 1200° C. Implantation were performed using Se ions of 200 keV to a fluence …
Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon
A study of a tungsten (W) thin film deposited on a single crystalline 6H–SiC substrate and
annealed in Ar at temperatures of 700° C, 800° C, 900° C and 1000° C for 1 hour was …
annealed in Ar at temperatures of 700° C, 800° C, 900° C and 1000° C for 1 hour was …