A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple
quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs …

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …

We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple
quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-do** is applied to an …

AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only
alternative technology to replace mercury lamps for water purification and disinfection. At …

Excitation power and temperature dependences of the photoluminescence (PL) spectra are
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …

An analytic model is developed for the droop in the efficiency-versus-current curve for light-
emitting diodes (LEDs) made from semiconductors having strong asymmetry in carrier …

We demonstrated AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with
periodic air-voids-incorporated nanoscale patterns enabled by nanosphere lithography and …

For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …