Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Nondestructive, high-resolution, chemically specific 3D nanostructure characterization using phase-sensitive EUV imaging reflectometry
Next-generation nano-and quantum devices have increasingly complex 3D structure. As the
dimensions of these devices shrink to the nanoscale, their performance is often governed by …
dimensions of these devices shrink to the nanoscale, their performance is often governed by …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy
Transmission electron microscopy (TEM) offers an ample range of complementary
techniques which are able to provide essential information about the physical, chemical and …
techniques which are able to provide essential information about the physical, chemical and …
Characterization of a Ga-assisted GaAs nanowire array solar cell on Si substrate
A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …
Do** assessment in GaAs nanowires
Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic
devices. One of the critical issues in NWs is the control of impurity do** for the formation of …
devices. One of the critical issues in NWs is the control of impurity do** for the formation of …
Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System
Nanowires have the potential to play an important role for next-generation light-emitting
diodes. In this work, we present a growth scheme for radial nanowire quantum-well …
diodes. In this work, we present a growth scheme for radial nanowire quantum-well …
Three-fold symmetric do** mechanism in GaAs nanowires
A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular
beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants …
beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants …
Quantitative measurement of nanoscale electrostatic potentials and charges using off-axis electron holography: Developments and opportunities
Off-axis electron holography has evolved into a powerful electron-microscopy-based
technique for characterizing electromagnetic fields with nanometer-scale resolution. In this …
technique for characterizing electromagnetic fields with nanometer-scale resolution. In this …
Electron holography
Electron holography is a powerful technique that allows the phase shift of a high-energy
electron wave that has passed through a specimen in the transmission electron microscope …
electron wave that has passed through a specimen in the transmission electron microscope …