Provided herein are methods and apparatuses for reducing line bending when depositing a
metal such as tungsten, molybdenum, ruthenium, or cobalt into features on sub strates by …

Methods and apparatuses for filling features with metal materials such as tungsten-
containing materials in a substantially void-free manner are provided. In certain …

HOIL 2L/3205(2006.01) HOIL 2L/768(2006.01)(57) ABSTRACT HOIL 2L/326(2006.01)
Provided herein are methods of depositing void-free cobalt C23C I6/52(2006.01) into …

BACKGROUND 0002 Continuing Scaling in manufacturing of comple mentary-metal-oxide-
semiconductor (CMOS) transistors Such as transistors with replacement-metal-gate (RMG) …

BACKGROUND ART [0002] In recent years, with an increase in circuit integra tion and
improvement in performance, it is demanded to form a metal film in an extra fine groove …

Described herein are methods of filling features with tung sten, and related systems and
apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods …

Sten and related systems and apparatus. The methods include inside-out fill techniques as
well as conformal deposition in features. Inside-out fill techniques can include selective …

Described are cleaning methods for removing contaminants from an electrical contact
interface of a partially fabricated semiconductor substrate. The methods may include …

Disclosed herein are methods of filling a 3-D structure of a semiconductor Substrate with a
tungsten-containing material. The 3-D structure may include sidewalls, a plurality of open …

US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill - Google
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …