Highly strained InGaAs/GaAs quantum wells grown at very low temperature (380° C) have
been studied. The critical thickness of the In 0.38 Ga 0.62 As quantum well is 8.8 nm and the …

We present results based on quantum mechanical estimates of the longest emission
wavelength for nitride laser diodes grown on c-plane GaN/sapphire substrates. The results …

Reflectivity simulation is an essential tool for the design and optimization of optical thin films.
We have developed a reflectivity simulator for non-absorbing dielectric multilayer optical thin …

We report a single-mode 1180 nm distributed Bragg reflector (DBR) laser diode with a high
output power of 340 mW. For the fabrication, we employed novel nanoimprint lithography …

Highly strained InGaAs/GaAs quantum wells (QWs) are studied using the complementary
spectroscopic and high-resolution x-ray diffraction (HRXRD) techniques. It is found that the …

The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-
reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings …

The growth of InGaAs quantum wells (QWs) on GaAs was optimized in situ using a high-
resolution curvature sensor in metal-organic vapour phase epitaxy. The very small change …

We investigate a novel grown-MOCVD BGaAs/InGaAs/BGaAs/GaAs heterostructure for the
first time using High-Resolution X-Ray Diffraction (HR-XRD), steady state …

Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to
characterize a series of highly strained InxGa1− xAs/GaAs quantum well (QW) structures …

Highly strained InxGa1–xAs quantum wells (QWs) with GaAs barriers emitting around 1.2
µm are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low …