Grain growth and the puzzle of its stagnation in thin films: The curious tale of a tail and an ear
The underlying cause of stagnation of grain growth in thin metallic films remains a puzzle.
Here it is re-visited by means of detailed comparison of experiments and simulations, using …
Here it is re-visited by means of detailed comparison of experiments and simulations, using …
[PDF][PDF] Particle size characterization of nanoparticles–a practical approach
B Akbari, MP Tavandashti… - Iranian Journal of …, 2011 - scholar.archive.org
Most properties of nanoparticles are size-dependent. In fact, the novel properties of
nanoaprticles do not prevail until the size has been reduced to the nanometer scale. The …
nanoaprticles do not prevail until the size has been reduced to the nanometer scale. The …
Computational electromagnetics and the rational design of new dielectric heterostructures
Dielectric properties of heterogeneous materials for various condensed-matter systems have
been gaining world-wide attention over the past 50 or so years in the design (or …
been gaining world-wide attention over the past 50 or so years in the design (or …
Surface and grain-boundary scattering in nanometric Cu films
We report a quantitative analysis of both surface and grain-boundary scattering in Cu thin
films with independent variation in film thickness (27 to 158 nm) and grain size (35 to 425 …
films with independent variation in film thickness (27 to 158 nm) and grain size (35 to 425 …
Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films
Sputter-deposited W films with nominal thicknesses between 5 and 180 nm were prepared
by varying the base pressure prior to film deposition and by including or not including …
by varying the base pressure prior to film deposition and by including or not including …
Failure of semiclassical models to describe resistivity of nanometric, polycrystalline tungsten films
The impact of electron scattering at surfaces and grain boundaries in nanometric
polycrystalline tungsten (W) films was studied. A series of polycrystalline W films ranging in …
polycrystalline tungsten (W) films was studied. A series of polycrystalline W films ranging in …
Dominant role of grain boundary scattering in the resistivity of nanometric Cu films
The dominant role of grain boundary scattering in the low-temperature resistivity of both SiO
2 and Ta/SiO 2 encapsulated Cu thin films is demonstrated by the experimental variation …
2 and Ta/SiO 2 encapsulated Cu thin films is demonstrated by the experimental variation …
Quantifying the dispersion of mixture microstructures
ZP Luo, JH Koo - Journal of microscopy, 2007 - Wiley Online Library
A general method to quantify the inclusion dispersion of mixture microstructures has been
developed. The dispersion quantity, D, is defined as the probability of inclusion particle free …
developed. The dispersion quantity, D, is defined as the probability of inclusion particle free …
Nanosized zirconium porphyrinic metal–organic frameworks that catalyze the oxygen reduction reaction in acid
Porphyrinic metal–organic frameworks (PMOFs) are very appealing electrocatalytic
materials, in part, due to their highly porous backbone, well‐defined and dispersed metal …
materials, in part, due to their highly porous backbone, well‐defined and dispersed metal …
Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
K Barmak, A Gungor, C Cabral Jr… - Journal of applied …, 2003 - pubs.aip.org
The impact of 11 alloying elements, namely, Mg, Ti, In, Sn, Al, Ag, Co, Nb, and B, at two
nominal concentrations of 1 and 3 at.%, and Ir and W, at only a nominal concentration of 3 …
nominal concentrations of 1 and 3 at.%, and Ir and W, at only a nominal concentration of 3 …