As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …

Graphene has been regarded as a promising candidate for a new generation of transparent
electrodes (TEs) due to its prominent characteristics including high optical transmittance …

Graphene, with attractive electrical, optical, mechanical and thermal properties, is
considered to be an ideal candidate for transparent conductive electrodes (TCEs) in many …

Graphene combines high conductivity (sheet resistance down to a few hundred Ω/sq and
even less) with high transparency (> 90%) and thus exhibits a huge application potential as …

Graphene, the atomically thin sheet of sp2 hybridized carbon atoms arranged in honeycomb
structure, is becoming the forefront of material research. The chemical vapor deposition …

Due to their low power consumption, long lifetime and high efficiency, nitrides based white
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …

This paper reviews the recent progress in the design and fabrication strategies of III‐nitride
semiconductor microdisk lasers on sapphire or Si substrates. Involving more accurate …

Group III nitride semiconductors (III‐N), including GaN, AlN, InN, and their alloys, are
currently the materials of choice for many applications in optoelectronics (light‐emitting …

Understanding the charge carrier transport characteristics at the graphene-GaN interface is
of significant importance for the fabrication of efficient photoresponsive devices. Here, we …

Metal‐insulator‐semiconductor (MIS) based Schottky barrier diode (SBD) has significant
importance for optoelectronics and other device applications. Here, we demonstrate the …