A broadband linear ultra-compact mm-wave power amplifier with distributed-balun output network: Analysis and design
F Wang, H Wang - IEEE Journal of Solid-State Circuits, 2021 - ieeexplore.ieee.org
This article presents a broadband power amplifier (PA) with a distributed-balun output
network that provides the PA optimum load impedance over a wide bandwidth. The …
network that provides the PA optimum load impedance over a wide bandwidth. The …
A millimeter-wave three-way Doherty power amplifier for 5G NR OFDM
This article presents a millimeter-wave (mmWave) three-way Doherty output network and its
silicon implementation at 38 GHz for 5G new radio (NR) orthogonal frequency-division …
silicon implementation at 38 GHz for 5G new radio (NR) orthogonal frequency-division …
24.1 A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-Active-Transformer Power-Combining Supporting 5G NR …
F Wang, H Wang - 2020 IEEE International Solid-State Circuits …, 2020 - ieeexplore.ieee.org
The continuous worldwide demand for multi-Gb/s data-rate has driven the rapid
development and standardization of 5G New Radio (NR) specifications in the mmwave …
development and standardization of 5G New Radio (NR) specifications in the mmwave …
26.2 A Doherty-Like Load-Modulated Balanced Power Amplifier Achieving 15.5dBm Average Pout and 20% Average PAE at a Data Rate of 18Gb/s in 28nm CMOS
The continuous growth in demand for high-speed wireless connectivity is one of the main
driving forces in the standardization and development of mm-wave systems. 5G new radio …
driving forces in the standardization and development of mm-wave systems. 5G new radio …
A high-power broadband multi-primary DAT-based Doherty power amplifier for mm-wave 5G applications
F Wang, H Wang - IEEE Journal of Solid-State Circuits, 2021 - ieeexplore.ieee.org
Silicon-based millimeter-wave (mm-Wave) power amplifiers (PAs) with high power and high
peak/back-off efficiency are highly desired to efficiently amplify multi-Gb/s 5G NR signals …
peak/back-off efficiency are highly desired to efficiently amplify multi-Gb/s 5G NR signals …
A Ka-Band Doherty-Like LMBA for High-Speed Wireless Communication in 28-nm CMOS
This article presents a millimeter-wave (mm-wave) Doherty-like load modulated balanced
amplifier (LMBA) for high-speed wireless communication in a 28-nm bulk CMOS process …
amplifier (LMBA) for high-speed wireless communication in a 28-nm bulk CMOS process …
A broadband transformer-based power amplifier achieving 24.5-dBm output power over 24–41 GHz in 65-nm CMOS process
TH Fan, Y Wang, H Wang - IEEE Microwave and Wireless …, 2020 - ieeexplore.ieee.org
A fully integrated one-stage cascode wideband power amplifier (PA) in 65-nm CMOS
technology is presented in this letter. A matching technique is leveraged to achieve …
technology is presented in this letter. A matching technique is leveraged to achieve …
High-power generation for mm-wave 5G power amplifiers in deep submicrometer planar and FinFET bulk CMOS
A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
A 30-to-41 GHz SiGe power amplifier with optimized cascode transistors achieving 22.8 dBm output power and 27% PAE
C Wan, H Zhang, L Li, K Wang - IEEE Transactions on Circuits …, 2020 - ieeexplore.ieee.org
In this brief, A two-stage power amplifier (PA) with a four-way series-parallel power combiner
is presented for Ka-band applications. A compact power stage with optimized cascode …
is presented for Ka-band applications. A compact power stage with optimized cascode …
Design and analysis of a 28 GHz T/R front-end module in 22-nm FD-SOI CMOS technology
This article presents practical design considerations and methodologies for a 28-GHz front-
end module (FEM) in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS technology …
end module (FEM) in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS technology …