Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures
Dislocations provide fast diffusion pathways for atoms in semiconductors which can alter
compositional profiles of finely tuned heterostructures. We show in model lattice-mismatched …
compositional profiles of finely tuned heterostructures. We show in model lattice-mismatched …
Crystallization processes for photovoltaic silicon ingots: Status and perspectives
The choice of the crystallization process plays a crucial role in determining the quality and
performance of the photovoltaic (PV) silicon ingots, which are subsequently used to …
performance of the photovoltaic (PV) silicon ingots, which are subsequently used to …
Surface Examination of Structure Loss in N-Type Czochralski Silicon Ingots
R Hendawi, G Stokkan, E Øvrelid… - SiliconPV Conference …, 2023 - tib-op.org
In principle, growing a dislocation-free Czochralski silicon ingot is possible if the growth
process is kept stable and below the critical resolved shear stress value. However, in …
process is kept stable and below the critical resolved shear stress value. However, in …
Investigations of the electrical activity of defects in group IV and group III-N alloys integrated on Si substrates
H Tetzner - 2023 - opus4.kobv.de
The hetero-integration of group IV and III-V epitaxial layers on silicon (Si) substrates enables
novel devices for optoelectronic and high-power applications. However, lattice and thermal …
novel devices for optoelectronic and high-power applications. However, lattice and thermal …
[PDF][PDF] Investigations of the electrical activity of defects in group IV and group III-N alloys integrated on Si substartes
H Tetzner - opus4.kobv.de
The hetero-integration of group IV and III-V epitaxial layers on silicon (Si) substrates enables
the fabrication of novel devices for optoelectronic and high-power applications. However …
the fabrication of novel devices for optoelectronic and high-power applications. However …