Technology, capabilities, and performance of low power terahertz sources

G Chattopadhyay - IEEE Transactions on Terahertz Science …, 2011 - ieeexplore.ieee.org
New and emerging terahertz technology applications make this a very exciting time for the
scientists, engineers, and technologists in the field. New sensors and detectors have been …

The development of frequency multipliers for terahertz remote sensing system

Y Zhang, C Wu, X Liu, L Wang, C Dai, J Cui, Y Li… - Remote Sensing, 2022 - mdpi.com
This paper summarizes the development of novel Schottky-diode-based terahertz frequency
multipliers. The basic structure and manufacturing process of planar Schottky barrier diodes …

Status and prospects of high-power heterostructure barrier varactor frequency multipliers

J Stake, A Malko, T Bryllert… - Proceedings of the IEEE, 2017 - ieeexplore.ieee.org
There is a high demand for compact, room-temperature sources operating at millimeter-
wave and terahertz (THz) frequencies for space instruments and terrestrial applications. This …

Symmetric varactor in 130-nm CMOS for frequency multiplier applications

D Shim - IEEE Electron Device Letters, 2011 - ieeexplore.ieee.org
A symmetric varactor (SVAR) in 130-nm digital complementary metal-oxide-semiconductor
(CMOS) for frequency multiplier applications with the maximum cutoff frequency of~ 320 …

Monolithic HBV-based 282-GHz tripler with 31-mW output power

J Vukusic, T Bryllert, Ø Olsen… - IEEE Electron Device …, 2012 - ieeexplore.ieee.org
We present a heterostructure barrier varactor multiplier at 282 GHz. The tripler chip was
monolithically fabricated in the InGaAs/InAlAs material system on InP as carrier substrate …

A pure frequency tripler based on CVD graphene

C Cheng, B Huang, J Liu, Z Zhang… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, the chemical vapor deposition grown single-layer graphene with micrometer
scale graphene flakes interspersed on the surface has been first used to implement field …

An unconventional hybrid variable capacitor with a 2-d electron gas

P Dianat, R Prusak, A Persano, A Cola… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Moderation of internal quantum mechanical energies, such as exchange energy of an
unconventional contact, comprised of a system of 2-D charge carriers, improves …

A 175 GHz HBV frequency quintupler with 60 mW output power

T Bryllert, A Malko, J Vukusic… - IEEE microwave and …, 2012 - ieeexplore.ieee.org
In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output
power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based …

Schottky frequency doubler for 140–220GHz using MMIC foundry process

T Kiuru, K Dahlberg, J Mallat… - 2012 7th European …, 2012 - ieeexplore.ieee.org
Paper presents the design and fabrication steps as well as measurement results for a fixed-
tuned full-waveguide band Schottky frequency doubler. The doubler consists of a GaAs …

[BOOK][B] Modelling and characterisation of terahertz planar Schottky diodes

AY Tang - 2013 - search.proquest.com
This thesis deals with the modelling and characterisation of THz planar Schottky diodes,
focusing on analyses of geometry-dependent electrical parasitics and the thermal …