Wide bandgap devices in AC electric drives: Opportunities and challenges

AK Morya, MC Gardner, B Anvari, L Liu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

A review of high-speed GaN power modules: state of the art, challenges, and solutions

AI Emon, AB Mirza, J Kaplun, SS Vala… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …

A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices

B Zhang, S Wang - IEEE Journal of Emerging and Selected …, 2019 - ieeexplore.ieee.org
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …

Comprehensive review and state of development of double-sided cooled package technology for automotive power modules

M Liu, A Coppola, M Alvi… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
Power modules are core components of inverters in electric vehicles and their packaging
technology has a critical impact on system performance and reliability. Conventional single …

A double-side cooled SiC MOSFET power module with sintered-silver interposers: I-design, simulation, fabrication, and performance characterization

C Ding, H Liu, KDT Ngo, R Burgos… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Planar, double-side cooled power modules are emerging in electric-drive inverters because
of their low profile, better heat extraction, and lower package parasitic inductances …

Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources

SK Mazumder, LF Voss, KM Dowling… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …

[HTML][HTML] Silicon carbide converters and MEMS devices for high-temperature power electronics: A critical review

X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulator-based gate drive

Z Wang, X Shi, LM Tolbert, F Wang… - … on Power Electronics, 2014 - ieeexplore.ieee.org
This paper presents a board-level integrated silicon carbide (SiC) mosfet power module for
high temperature and high power density application. Specifically, a silicon-on-insulator …

Development of SiC power module structure by micron-sized Ag-paste sinter joining on both die and heatsink to low-thermal-resistance and superior power cycling …

C Chen, A Suetake, F Huo, D Kim… - … on Power Electronics, 2024 - ieeexplore.ieee.org
In this study, the thermal characteristics and structure reliability during power cycling for the
four types of SiC power module fabricated using a SiC-heater chip, direct bonded aluminum …

Challenges regarding parallel connection of SiC JFETs

D Peftitsis, R Baburske, J Rabkowski… - … on Power Electronics, 2012 - ieeexplore.ieee.org
State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to
be used in high-power converters. It is, therefore, necessary to connect several switches in …