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Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
A review of high-speed GaN power modules: state of the art, challenges, and solutions
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …
systems. In high-speed hard-switching applications, voltage overshoot across device …
A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …
to their superior characteristics compared to their Si counterparts. However, their fast …
Comprehensive review and state of development of double-sided cooled package technology for automotive power modules
Power modules are core components of inverters in electric vehicles and their packaging
technology has a critical impact on system performance and reliability. Conventional single …
technology has a critical impact on system performance and reliability. Conventional single …
A double-side cooled SiC MOSFET power module with sintered-silver interposers: I-design, simulation, fabrication, and performance characterization
Planar, double-side cooled power modules are emerging in electric-drive inverters because
of their low profile, better heat extraction, and lower package parasitic inductances …
of their low profile, better heat extraction, and lower package parasitic inductances …
Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources
This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …
[HTML][HTML] Silicon carbide converters and MEMS devices for high-temperature power electronics: A critical review
X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …
performance power conversion systems and MEMS devices that can operate reliably in …
A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulator-based gate drive
This paper presents a board-level integrated silicon carbide (SiC) mosfet power module for
high temperature and high power density application. Specifically, a silicon-on-insulator …
high temperature and high power density application. Specifically, a silicon-on-insulator …
Development of SiC power module structure by micron-sized Ag-paste sinter joining on both die and heatsink to low-thermal-resistance and superior power cycling …
C Chen, A Suetake, F Huo, D Kim… - … on Power Electronics, 2024 - ieeexplore.ieee.org
In this study, the thermal characteristics and structure reliability during power cycling for the
four types of SiC power module fabricated using a SiC-heater chip, direct bonded aluminum …
four types of SiC power module fabricated using a SiC-heater chip, direct bonded aluminum …
Challenges regarding parallel connection of SiC JFETs
State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to
be used in high-power converters. It is, therefore, necessary to connect several switches in …
be used in high-power converters. It is, therefore, necessary to connect several switches in …