β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

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[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap

Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu… - Fundamental …, 2021 - Elsevier
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
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Recent advances in NiO/Ga2O3 heterojunctions for power electronics

X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
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Ultra-wide bandgap semiconductor Ga2O3 power diodes

J Zhang, P Dong, K Dang, Y Zhang, Q Yan… - Nature …, 2022 - nature.com
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
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Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers

JS Li, CC Chiang, X ** and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
JS Li, CC Chiang, X ** in the drift layer and the thickness and extent of extension beyond the
cathode contact of a NiO bilayer in vertical NiO/β-Ga 2 O 3 rectifiers is reported. Decreasing …
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Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV

JS Li, HH Wan, CC Chiang, X **a, TJ Yoo, H Kim… - Crystals, 2023 - mdpi.com
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …
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[HTML][HTML] NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices

M **ao, B Wang, J Spencer, Y Qin, M Porter… - Applied Physics …, 2023 - pubs.aip.org
Edge termination is the enabling building block of power devices to exploit the high
breakdown field of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors …
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