[KSIĄŻKA][B] Handbook of ultra-wideband short-range sensing: theory, sensors, applications
J Sachs - 2013 - books.google.com
Ranging from the theoretical basis of UWB sensors via implementation issues to
applications, this much-needed book bridges the gap between designers and appliers …
applications, this much-needed book bridges the gap between designers and appliers …
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
B Heinemann, R Barth, D Bolze, J Drews… - 2010 International …, 2010 - ieeexplore.ieee.org
A SiGe HBT technology featuring f T/f max/BV CEO= 300GHz/500GHz/1.6 V and a minimum
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …
Half-terahertz sige bicmos technology
H Rücker, B Heinemann, A Fox - 2012 IEEE 12th Topical …, 2012 - ieeexplore.ieee.org
This paper addresses the integration of a new generation of high-speed SiGe HBTs with f T/f
max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm …
max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm …
Germanium on Insulator and new 3D architectures opportunities for integration
M Vinet, C Le Royer, P Batude… - International …, 2010 - inderscienceonline.com
Ge encounters an interest revival for CMOS applications because of its high carriers
mobility. GeOI pMOSFET with excellent ON currents and controlled threshold voltage have …
mobility. GeOI pMOSFET with excellent ON currents and controlled threshold voltage have …
A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps
H Rücker, B Heinemann, W Winkler… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
This paper presents Si/SiGe: C and InP/GaAsSb HBTs which feature specific assets to
address submillimeter-wave and THz applications. Process and modeling status and …
address submillimeter-wave and THz applications. Process and modeling status and …
[KSIĄŻKA][B] Compact hierarchical bipolar transistor modeling with HICUM
M Schröter, A Chakravorty - 2010 - World Scientific
Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical
benefit to professionals from the process development, modeling and circuit design …
benefit to professionals from the process development, modeling and circuit design …
Towards thz sige hbts
P Chevalier, TF Meister, B Heinemann… - 2011 IEEE Bipolar …, 2011 - ieeexplore.ieee.org
This paper summarizes the technological developments carried out on SiGe HBTs in the
frame of the European project DOTFIVE. The architectures of the different partners and their …
frame of the European project DOTFIVE. The architectures of the different partners and their …
Physical and electrical performance limits of high-speed SiGeC HBTs—Part I: Vertical scaling
M Schroter, G Wedel, B Heinemann… - … on Electron Devices, 2011 - ieeexplore.ieee.org
The overall purpose of this paper (including Part I, in this issue) is the prediction of the
ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar …
ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar …
High speeds in a single chip
This article reviews the development and breakthrough of SiGe technologies. SiGe HBTs
with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and …
with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and …