Fabrication of high strength aluminum-graphene oxide (GO) composites using microwave sintering

R Askarnia, B Ghasemi, SR Fardi… - Advanced Composite …, 2021 - Taylor & Francis
The aim of the present study is to use microwave sintering technique to fabricate Al-
Graphene oxide (Al-GO) composites with different concentration of GO (ie 0.5 wt%, 1 wt …

Effect of sintering activation energy on Si3N4 composite ceramics

CC Ye, WQ Wei, X Fu, CH Wang, HQ Ru - Ceramics International, 2022 - Elsevier
This study investigated the activation energy and kinetic characteristics of silicon nitride (Si 3
N 4) composite ceramics produced using different preparation methods. The effects of the …

In-situ scanning transmission electron microscopy study of Al-amorphous SiO2 layer-SiC interface

E Adabifiroozjaei, E Rastkerdar, Y Nemoto… - Journal of Materials …, 2023 - Springer
Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning
transmission electron microscopy ((S) TEM) of Al-amorphous SiO2–SiC interface. The …

Kinetically controlled oxidation of multi-component alloy coatings by tailoring chemical bonds: Effects of nitrogen on the oxidation of FeCrAlMoSiYNx

Y Li, M Zhou, R Wang, F Ge, F Meng - Surface and Coatings Technology, 2025 - Elsevier
The influence of nitrogen on the oxidation of multi-component coatings is convoluted in
terms of kinetics and products, and the mechanism is not entirely clear. For this purpose, a …

Microstructure, phase compositions and mechanical properties of slip cast sintered SiC/Si3N4 composites

S Shahrestani, MC Ismail, S Kakooei, M Beheshti - Ceramics International, 2021 - Elsevier
In this study, a slurry containing a mixture of Si and SiC powders was used to fabricate the
SiC/Si 3 N 4 composites by slip casting method and sintering in a nitrogen-controlled …

Nanosecond laser-induced contact reactive brazing of Si3N4 ceramic to Al

H Zhu, B Chen, Y Song, N Chen, D Liu, X Song, C Tan - Materials Letters, 2021 - Elsevier
In this study, a nanosecond laser was conducted to modify the Si 3 N 4 surface to realize the
bonding of Si 3 N 4 to Al. The effects of nanosecond laser irradiation on the surface …

Molecular dynamics simulation of vacancy cluster formation in β-and α-Si3N4

E Adabifiroozjaei, SS Mofarah, H Ma, Y Jiang… - Computational Materials …, 2020 - Elsevier
Molecular dynamics simulation is used to study vacancy cluster formation in β-and α-Si 3 N
4 with varying vacancy contents (0–25.6 at%). Vacancies are randomly created in …