Ab initio modeling of dislocation core properties in metals and semiconductors
Dislocation cores, the regions in the immediate vicinity of dislocation lines, control a number
of properties such as dislocation mobility, cross-slip and short-range interactions with other …
of properties such as dislocation mobility, cross-slip and short-range interactions with other …
[LIVRE][B] Dislocations, mesoscale simulations and plastic flow
L Kubin - 2013 - books.google.com
In the past twenty years, new experimental approaches, improved models and progress in
simulation techniques have brought new insights into longstanding issues concerning …
simulation techniques have brought new insights into longstanding issues concerning …
Enabling plastic co-deformation of disparate phases in a laser rapid solidified Sr-modified Al–Si eutectic through partial-dislocation-mediated-plasticity in Si
Nano-scale eutectics, such as rapid solidified Al–Si, exhibit enhanced yield strength and
strain hardening but plasticity is limited by cracking of the hard phase (Si). Mechanisms that …
strain hardening but plasticity is limited by cracking of the hard phase (Si). Mechanisms that …
Dislocations in silicon at high stress
J Rabier, L Pizzagalli, JL Demenet - Dislocations in solids, 2010 - Elsevier
This chapter is devoted to the structure and properties of dislocations obtained at high stress
in silicon, which have been shown to have different core structures from the ones observed …
in silicon, which have been shown to have different core structures from the ones observed …
Quantum effect on thermally activated glide of dislocations
Crystal plasticity involves the motion of dislocations under stress. So far, atomistic
simulations of this process have predicted Peierls stresses, the stress needed to overcome …
simulations of this process have predicted Peierls stresses, the stress needed to overcome …
Achieving micron-scale plasticity and theoretical strength in Silicon
As the backbone material of the information age, silicon is extensively used as a functional
semiconductor and structural material in microelectronics and microsystems. At ambient …
semiconductor and structural material in microelectronics and microsystems. At ambient …
Size and temperature effects on the fracture mechanisms of silicon nanowires: Molecular dynamics simulations
We present molecular dynamics simulations of [110]-oriented Si nanowires (NWs) under a
constant strain rate in tension until failure, using the modified embedded-atom-method …
constant strain rate in tension until failure, using the modified embedded-atom-method …
Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires
Individual single-crystalline Si nanowires (NWs) were bent by forming loops or arcs with
different radius. Positional-resolved atomic level strain distribution (PRALSD) along both of …
different radius. Positional-resolved atomic level strain distribution (PRALSD) along both of …
A new parametrization of the Stillinger–Weber potential for an improved description of defects and plasticity of silicon
A new parametrization of the widely used Stillinger–Weber potential is proposed for silicon,
allowing for an improved modelling of defects and plasticity-related properties. The …
allowing for an improved modelling of defects and plasticity-related properties. The …
Stability and mobility of screw dislocations in 4H, 2H and 3C silicon carbide
L Pizzagalli - Acta Materialia, 2014 - Elsevier
Large-scale first-principles calculations were performed to determine the stability and
mobility properties of screw dislocations in common silicon carbide polytypes (4H, 2H and …
mobility properties of screw dislocations in common silicon carbide polytypes (4H, 2H and …