Despite being the most promising third-generation semiconductor materials, the deformation
and removal mechanisms of gallium nitride (GaN) single crystals involved in the ultra …

Laser-heated diamond anvil cell (LH-DAC) experimentation has emerged as a leading
technique for materials processing at extreme pressures and temperatures. LH-DAC …

What is the likelihood that a hypothetical material—the combination of a composition and
crystal structure—can be formed? Underpinning the reliability of predictions for local or …

The technology of GaN is very advanced due to excellent figures of merit relevant for key
applications like LEDs or high-power–high-frequency transistors. Nevertheless, some …

The field of high-pressure materials research has grown steadily over the last seven
decades, with many remarkable discoveries having been made. This work is part II of a three …

The thin-film synthesis of high-pressure phases in inorganic compounds remains a
challenge. The synthesis of high-pressure phases in thin-film form opens potential …

High-quality and high-efficiency processing of gallium nitride (GaN) crystals is urgently
required for optoelectronic communications and other major industries. This study proposes …

In weakly and strongly bonded semiconductors, the knowledge of accurate linear thermal
expansion coefficients α T and Grüneisen constants γ T play crucial roles for attaining the …

Revealing atomic and electronic structures and elemental do** behavior of basal-plane
inversion domain boundaries (b-IDBs) is crucial for a deep understanding of polarization …

Density functional theory, in conjunction with the quasi-harmonic approximation, has been
used to study the equilibrium between the orthorhombic and tetragonal phases of Ba3Ge4 …