Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

As key components of the human brain's neural network, synapses and neurons are
important processing units that enable highly complex neuromorphic systems. Spiking …

Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …

Hafnia‐based compounds have considerable potential for use in nanoelectronics due to
their compatibility with complementary metal–oxide–semiconductor devices and robust …

Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …

Ferroelectric hafnia-based thin films have attracted significant interest due to their
compatibility with complementary metal-oxide-semiconductor technology (CMOS) …

The metastable orthorhombic phase of Hf0. 5Zr0. 5O2 (HZO) can be stabilized in thin films
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …