Halide perovskite semiconductors with extraordinary optoelectronic properties have been
fascinatedly studied. Halide perovskite nanocrystals, single crystals, and thin films have …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long
attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs …

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …

The development of the low dislocation density of the Si-based GaAs buffer is considered
the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated …

InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer
and three-step growth method in the molecular beam epitaxy (MBE) system. In addition …

Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells
and flexible electronics. However, their application at large scale is limited by their …

Direct deposition of high-quality Ge film on Si substrate suitable for fabricating Ge/Si
photodiodes was achieved by using plasma-enhanced chemical vapor deposition (PECVD) …

Excellent performance III-V quantum-dot (QD) lasers grown on Si substrates by molecular
beam epitaxy (MBE) are the most promising candidates for commercially viable Si-based …

This paper presents a comparative study of GaSb nanowire (NWs) growth on a Si substrate
using Ag nanoparticles as catalyst and on a Si substrate coated with a transparent …