Design of ultracompact gate driver integrated with current sensor and commutation path for a 211-kW three-level SiC aircraft propulsion inverter

X Zhao, R Phukan, CW Chang… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
The aviation industry is increasingly interested in high-efficiency and high-density electric
propulsion systems enabled by high-power silicon carbide (SiC) modules. However …

Design of interfacial electrical tree-resistant packaging insulation using grafted silicone elastomer nanocomposites for high-temperature power modules

Q Wang, X Chen, A Paramane, J Li… - … on Power Electronics, 2024 - ieeexplore.ieee.org
The interfacial electrical tree (IET) between the packaging insulation and the ceramic
substrate is easily initiated by a high electric field around the triple point in the power …

Monte carlo statistical tolerance analysis of a parallel-plate multi-chip power module

D Lester, M Cairnie, C DiMarino - IEEE Transactions on Power …, 2024 - ieeexplore.ieee.org
A Monte Carlo statistical tolerance analysis is conducted on a parallel-plate, wirebond-less
multichip power module (MCPM) to analyze the planarity across modules with post …

Double-Sided Cooling Half-Bridge Power Module of 650 V/150 A Gallium Nitride High-Electron-Mobility Transistor

S Lu, B Li, E Arriola, Z Zhang… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
The efficiency and power density of power conversion systems can be greatly improved by
utilizing gallium nitride high-electron-mobility transistors (GaN HEMTs) due to their ultra-low …

Package design and analysis of a 20-kV double-sided silicon carbide diode module with polymer nanocomposite field-grading coating

Z Zhang, E Arriola, C Nicholas, J Lynch… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
To tackle the insulation challenges present in packaging medium-voltage (MV) silicon
carbide (SiC) power devices, we developed a package design for a 20-kV SiC. This design …

Two-stage electric field optimization method for high-voltage power module using dielectrically graded insulation micro-region

H Yao, H Mu, W Li, D Zhang, H Zhao… - … on Dielectrics and …, 2023 - ieeexplore.ieee.org
Dielectrically graded insulation (DGI) with spatially inhomogeneous dielectric parameter
distribution can provide extraordinary insulation performance for high-voltage power …

Effective field grading at 200° C of a nonlinear resistive polymer nanocomposite coating for medium-voltage power modules

Z Zhang, Q Yuchi, C Nicholas… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Medium-voltage silicon carbide power modules have the potential to enable a more
renewable, resilient, and reliable electric grid. However, their electrical insulation, especially …

Packaging of a 15-kV silicon carbide MOSFET with insulation enhanced by a nonlinear resistive polymer-nanoparticle coating

Z Zhang, S Lu, C Nicholas, N Yun… - 2022 IEEE Energy …, 2022 - ieeexplore.ieee.org
Packaging of medium-voltage power semiconductor devices is challenging because the
insulation materials are demanded to withstand extremely high electric-field stresses as well …

Impacts of the Bottom Copper Layer of Direct-Bond Copper Substrates on the Partial Discharge Performance in Power Modules

Y Gao, K Yin, CL Bak, AB Jørgensen… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This paper studies the impacts of the bottom copper layer of direct-bond copper (DBC)
substrates on the partial discharge (PD) performance of the power modules. Finite element …

Insulation Capability at 10 kV,> 300 V/ns of a Nonlinear Resistive Polymer Nanocomposite Field-Grading Coating in a 15-kV Silicon Carbide Module

Z Zhang, P Fu, J Lynch, S Lu, C Nicholas… - … on Power Electronics, 2024 - ieeexplore.ieee.org
Emerging medium-voltage silicon carbide devices offer the potential to achieve more
efficient and compact power electronics for grid-tied applications. However, the lack of an …