A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …
Multiferroic heterostructures integrating ferroelectric and magnetic materials
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …
magnetic materials, with interfacial coupling between electric polarization and …
Solid-state memories based on ferroelectric tunnel junctions
Ferroic-order parameters are useful as state variables in non-volatile information storage
media because they show a hysteretic dependence on their electric or magnetic field …
media because they show a hysteretic dependence on their electric or magnetic field …
Ferroelectric tunnel junctions for information storage and processing
Computer memory that is non-volatile and therefore able to retain its information even when
switched off enables computers that do not need to be booted up. One of the technologies …
switched off enables computers that do not need to be booted up. One of the technologies …
Magnetoelectric coupling effects in multiferroic complex oxide composite structures
The study of magnetoelectric materials has recently received renewed interest, in large part
stimulated by breakthroughs in the controlled growth of complex materials and by the search …
stimulated by breakthroughs in the controlled growth of complex materials and by the search …
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
Ferroelectrics possess a polarization that is spontaneous, stable and electrically switchable,
and submicrometre-thick ferroelectric films are currently used as non-volatile memory …
and submicrometre-thick ferroelectric films are currently used as non-volatile memory …
Ferroelectric control of spin polarization
A current drawback of spintronics is the large power that is usually required for magnetic
writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled …
writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled …
Reversible electrical switching of spin polarization in multiferroic tunnel junctions
Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel
magnetoresistance, has already been proven to have great potential for application in the …
magnetoresistance, has already been proven to have great potential for application in the …
Prospects of spintronics based on 2D materials
Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …
manipulation of spin are most likely to replace the current silicon complementary metal …