A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology

S Dong, JM Liu, SW Cheong, Z Ren - Advances in Physics, 2015 - Taylor & Francis
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …

Multiferroic heterostructures integrating ferroelectric and magnetic materials

JM Hu, LQ Chen, CW Nan - Advanced materials, 2016 - Wiley Online Library
Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Solid-state memories based on ferroelectric tunnel junctions

A Chanthbouala, A Crassous, V Garcia… - Nature …, 2012 - nature.com
Ferroic-order parameters are useful as state variables in non-volatile information storage
media because they show a hysteretic dependence on their electric or magnetic field …

Ferroelectric tunnel junctions for information storage and processing

V Garcia, M Bibes - Nature communications, 2014 - nature.com
Computer memory that is non-volatile and therefore able to retain its information even when
switched off enables computers that do not need to be booted up. One of the technologies …

Magnetoelectric coupling effects in multiferroic complex oxide composite structures

CAF Vaz, J Hoffman, CH Ahn, R Ramesh - Advanced materials, 2010 - Wiley Online Library
The study of magnetoelectric materials has recently received renewed interest, in large part
stimulated by breakthroughs in the controlled growth of complex materials and by the search …

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

V Garcia, S Fusil, K Bouzehouane, S Enouz-Vedrenne… - Nature, 2009 - nature.com
Ferroelectrics possess a polarization that is spontaneous, stable and electrically switchable,
and submicrometre-thick ferroelectric films are currently used as non-volatile memory …

Ferroelectric control of spin polarization

V Garcia, M Bibes, L Bocher, S Valencia, F Kronast… - Science, 2010 - science.org
A current drawback of spintronics is the large power that is usually required for magnetic
writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled …

Reversible electrical switching of spin polarization in multiferroic tunnel junctions

D Pantel, S Goetze, D Hesse, M Alexe - Nature materials, 2012 - nature.com
Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel
magnetoresistance, has already been proven to have great potential for application in the …

Prospects of spintronics based on 2D materials

YP Feng, L Shen, M Yang, A Wang… - Wiley …, 2017 - Wiley Online Library
Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …