Abstract In 2004, Yeh and Cantor introduced high-entropy alloys (HEAs), which maximize
configurational entropy by utilizing nearly equal elemental molar ratios. These HEAs are …

Fundamental aspects and state-of-the-art results of thermal scanning probe lithography (t-
SPL) are reviewed here. t-SPL is an emerging direct-write nanolithography method with …

Neuromorphic computers could overcome efficiency bottlenecks inherent to conventional
computing through parallel programming and readout of artificial neural network weights in …

Although there have been attempts to use non‐lead based halide perovskite materials as
insulating layers for resistive switching memory, the ratio of low resistance state (LRS) to …

Thermal scanning probe lithography (tSPL) is a nanofabrication method for the chemical
and physical nanopatterning of a large variety of materials and polymer resists with a lateral …

High‐performance selector devices are essential for emerging nonvolatile memories to
implement high‐density memory storage and large‐scale neuromorphic computing. Device …

Memristive-based electro-optical neuromorphic hardware takes advantage of both the high-
density of electronic circuits and the high bandwidth of their photonic counterparts, thus …

High entropy oxides (HEOs) are single-phase solid solutions consisting of 5 or more cations
in approximately equiatomic proportions. In this study, we show the reversible control of …

The resistance state of filamentary memristors can be tuned by relocating only a few atoms
at interatomic distances in the active region of a conducting filament. Thereby the technology …

Resistive random-access memory (RRAM) has been extensively investigated for 20 years
due to its excellent advantages, including scalability, switching speed, compatibility with the …