Quantum technology grown out of quantum information theory, including quantum
communication, quantum computation and quantum sensing, not only provides powerful …

As a newest family member of the III-nitrides, BN is considered amongst the remaining
frontiers in wide energy bandgap semiconductors with potentials for technologically …

Using detailed first-principles calculations, we investigate the hop** rate of vacancies in
phosphorene, an emerging elemental 2D material besides graphene. Our work predicts that …

Deep ultraviolet photoluminescence (PL) emission spectroscopy has been employed to
investigate the origin of the widely observed deep level impurity related donor-acceptor pair …

Using first-principles calculations, we report on the structural and electronic properties of
bilayer hexagonal boron nitride (h-BN), incorporating hydrogen (H2) molecules inside the …

This paper provides a brief overview on recent advances made in authors' laboratory in
epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and …

In this paper, we present a detailed investigation of the structural, electronic, and optical
properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio …

Photoluminescence emission spectroscopy and electrical transport measurements have
been employed to study the origin and roles of oxygen impurities in hexagonal boron nitride …

Using first-principle calculations, we investigate the mechanical, structural, and electronic
properties and formation energy of 25 kinds of III–V binary monolayers in detail. A relative …

We study by molecular dynamics the structural properties of single layer hexagonal boron
nitride (h-BN) in comparison to graphene. We show that the Tersoff bond order potential …