Heterojunction formed at the amorphous/crystalline silicon (a-Si: H/c-Si) interface exhibits
distinctive electronic characteristics for application in silicon heterojunction (SHJ) solar cells …

Due to the low temperature processing constraint in silicon heterojunction (SHJ) solar cells,
no defect engineering to improve silicon wafer quality is typically incorporated during cell …

Herein, a systematic study of the electronic quality of gallium‐doped p‐type silicon wafers
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …

The temperature coefficient (TC) is a critical figure of merit to accurately evaluate the
performance of solar cells at various operating temperatures, and hence, enabling the …

This study investigates the injection dependence of carrier lifetimes of p‐and n‐type
samples passivated by doped‐polycrystalline silicon (poly‐Si)(p+ and n+ poly‐Si) contacts …

The need to increase transparency in existing passivating contacts for crystalline silicon
solar cells has motivated the development of transparent contacts based on transition metal …

This study reports on the electronic properties of industrial phosphorus-doped n-type silicon
ingots for photovoltaic applications grown using the Recharged Czochralski method. The …

Silicon heterojunction solar cells achieve high conversion efficiency due to the excellent
surface passivation provided by the hydrogenated intrinsic amorphous silicon films …

Silicon heterojunction solar cell fabrication incorporates a significant amount of hydrogen
into the silicon wafer bulk, and the amount of injected hydrogen is comparable to that …

Passivating contacts based on transition metal oxides are of great interest for applications in
crystalline silicon (c‐Si) solar cells due to their improved optical transparency and potential …