With the upcoming trend of Big Data era, some new types of memory technologies have
emerged as substitutes for the traditional Si-based semiconductor memory devices, which …

We show that graphene can be magnetized by coupling to a ferromagnetic Co film through a
Au monolayer. The presence of dislocation loops under graphene leads to a ferrimagnetic …

Modification of the electronic and crystal structure of zero-layer graphene grown on 6 H-SiC
(0001) after Co intercalation is reported. Using a wide range of techniques including angle …

Band structure and topology of magneto-spin–orbit graphene is investigated using the
proposed tight-binding model that incorporates both Rashba and sublattice-resolved …

The rapid transistor scaling and threshold voltage reduction pose several challenges such
as high leakage current and reliability issues. These challenges also make VLSI circuits …

For graphene nanoribbons with Rashba spin-orbit coupling, the peculiar magnetic response
due to the presence of a magnetization and geometric confinement are analyzed within a …

The HfZrO x (HZO) ferroelectric material is a promising material for ferroelectric memory and
is compatible with the semiconductor process for ferroelectric random access memory …

Modification of graphene electronic properties via contact with atoms of different kind allows
for designing a number of functional post-silicon electronic devices. Specifically, 2D metallic …

The chip performance has been improving with the process technology in recent years
following the Moore's law. Their applications and necessities are in various fields such as …

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase,
Eu 3 O 4, thin films grown on a Si/SiO 2 substrate and Si/SiO 2/graphene using molecular …