Electron transfer from the barrier in InAs/GaAs quantum dot-well structure
We study single electron tunneling from the barrier in the binary InAs/GaAs quantum
structure, including quantum well (QW) and quantum dot (QD). Tunneling is described in the …
structure, including quantum well (QW) and quantum dot (QD). Tunneling is described in the …
Bandedge-engineered quantum well laser
A promising type of quantum well (QW) lasers is discussed—bandedge-engineered (BE)
QW lasers. The use of two asymmetric barrier layers (one on each side of the QW) in such …
QW lasers. The use of two asymmetric barrier layers (one on each side of the QW) in such …
Output power of a double tunneling-injection quantum dot laser
DS Han, LV Asryan - Nanotechnology, 2009 - iopscience.iop.org
We develop a comprehensive theoretical model for a double tunneling-injection (DTI)
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …
Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
Y Wang, X Sheng, Q Yuan, Q Guo, S Wang, G Fu… - Journal of …, 2018 - Elsevier
Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum
dot (QD)–In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using …
dot (QD)–In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using …
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
W Rudno‐Rudziński, M Syperek… - … status solidi (a), 2018 - Wiley Online Library
The molecular beam epitaxy grown structures are investigated, comprising of InGaAs
quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs) …
quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs) …
Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
J Liu, S Luo, X Liu, Y Wang, C Wang, S Wang, G Fu… - Crystals, 2022 - mdpi.com
Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very
useful strategy to develop QD devices. This research aims to study the carrier injection effect …
useful strategy to develop QD devices. This research aims to study the carrier injection effect …
Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers
InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well,
InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by …
InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by …
Phonon-assisted tunneling of electrons in a quantum well/quantum dot injection structure
We study theoretically phonon-assisted relaxation and tunneling in a system composed of a
quantum dot which is coupled to a quantum well. Within the k· p method combined with the …
quantum dot which is coupled to a quantum well. Within the k· p method combined with the …
Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector
We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection
structure, which employs a GaAs 1− x N x quantum well (QW) as a carrier injector. The …
structure, which employs a GaAs 1− x N x quantum well (QW) as a carrier injector. The …
[HTML][HTML] Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …