The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Abstract Two‐dimensional (2D) transition metal dichalcogenides (TMDs), a rising star in the
post‐graphene era, are fundamentally and technologically intriguing for photocatalysis …

The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …

This review paper gives an overview of recent developments in nanoparticle research and
semiconductor industry applications. Nanoparticles have become useful building blocks for …

Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

The do** or the alteration of crystals with guest species to obtain desired properties has
long been a research frontier in materials science. However, the closely packed lattice …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

The intercalation-based exfoliation of layered materials is a broadly applicable strategy for
the scalable production of atomically thin (from mono-to few-layer) sheets, including …