Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …

Abstract Ferroelectricity in (Hf, Zr) O 2 films under 10 nm has been correlated with various
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …

How and why the reliability of ferroelectric HfO2‐and HZO (Hf0. 5Zr0. 5O2)‐based memory
devices strongly depends on the choice of electrode materials is currently under intense …

The rapid progress of the internet of things, cloud computing, and artificial intelligence has
increased demand for high-performance computing. This demand has led to a focused …

This study investigates the effects of field-cycling on the critical electric fields (Et→ PO and
EPO→ t) of the field-induced ferroelectric (FFE) effect in atomic layer deposited ZrO2 thin …

We employed first-principles to delve into the strain-induced structural phase transitions in
epitaxial LaTaO4 films. The ground state of bulk LaTaO4 adopts a monoclinic …

Here we report substantial effects of inserting PVD-prepared highly-conductive ultrathin WO
x as interfacial layer in TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/TiN structure on the ferroelectricity of HZO …

The inherent nonpolarity of tetragonal lysozyme crystals excludes a ferroelectricity response.
Herein, we present a demonstration of achieving measurable ferroelectricity in tetragonal …

Gallium nitride (GaN), one of the most popular optoelectronic materials in the semiconductor
industry, has gained renewed interest as a ferroelectric material when alloyed with …